M58BW016FB7T3T NUMONYX, M58BW016FB7T3T Datasheet - Page 40

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M58BW016FB7T3T

Manufacturer Part Number
M58BW016FB7T3T
Description
IC FLASH 16MBIT 70NS 80PQFP
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW016FB7T3T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-MQFP, 80-PQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW016FB7T3TCT
DC and AC parameters
Table 15.
1. I
40/70
I
DDP-UP
Symbol
V
V
V
V
I
to the moment when the supply voltage has become stable and RP is brought to High.
I
I
I
I
I
I
I
I
V
V
I
V
V
I
DDB
DD1
DD2
DD3
DD4
I
V
PPLK
DDP-UP
PP1
PP2
PP3
PP4
PPH
I
DD
PP1
LKO
LO
PP
OH
LI
OL
IH
IH
IL
(1)
is defined only during the power-up phase of the M58BW016FT/B, from the moment current is applied with RP Low
Input Leakage current
Output Leakage current
Supply current (Random Read)
Supply current (Power-up)
Supply current (Burst Read)
Supply current (Standby)
Supply current (Auto Low-Power)
Supply current (Reset/Power-down)
Supply current (Program or Erase,
Set Lock bit, Erase Lock bit)
Supply current
(Erase/Program Suspend)
Program current (Read or Standby)
Program current (Read or Standby)
Program current (Power-down)
Program current (Program)
Program in progress
Program current (Erase) Erase in
progress
Input Low voltage
Input High voltage (for DQ lines)
Input High voltage (for input only
lines)
Output Low voltage
Output High voltage CMOS
Program voltage
(program or erase operations)
Program voltage
(program or erase operations)
V
program lockout)
V
program lockout)
DD
PP
DC characteristics
supply voltage (erase and
supply voltage (erase and
Parameter
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
E = V
E = V
E = V
E = RP = V
Program, Block Erase in progress
f
f
clock
clock
f
add
E = V
E = V
IL
IL
IL
0.2 V
= 6 MHz
= 40 MHz
= 56 MHz
, G = V
, G = V
, G = V
RP = V
RP = V
E = V
0 V V
Test condition
0 V V
IH
IH
I
OH
I
DD
V
V
OL
V
V
V
V
RP = V
PP
PP
PP
PP
PP
PP
IH
IH
IH
= –100 µA
±
= 100 µA
SS
OUT
,
,
,
DD
IN
SS
= V
= V
= V
= V
M58BW016DT/B
M58BW016DT/B
M58BW016DT/B
M58BW016DT/B
M58BW016DT/B
M58BW016FT/B
M58BW016FT/B
M58BW016FT/B
M58BW016FT/B
M58BW016FT/B
M58BW016FT/B
V
± 0.2 V,
V
applies only to
± 0.2 V
± 0.2 V
PP1
V
PPH
PPH
PP1
PP1
PP1
V
IL
DDQ
DDQ
0.8V
0.8V
V
DDQ
–0.5
11.4
Min
2.7
DDQIN
DDQIN
–0.1
0.2V
V
DDQ
Max
± 30
± 30
12.6
11.4
150
150
200
200
± 5
3.6
0.1
3.6
2.2
±1
±5
20
25
20
30
30
40
60
60
60
30
40
20
20
DDQIN
+0.3
Unit
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V

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