M58BW016FB7T3T NUMONYX, M58BW016FB7T3T Datasheet - Page 57

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M58BW016FB7T3T

Manufacturer Part Number
M58BW016FB7T3T
Description
IC FLASH 16MBIT 70NS 80PQFP
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW016FB7T3T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-MQFP, 80-PQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW016FB7T3TCT
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 28.
1. Bits are coded in binary code decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in hexadecimal and scaled in Volts while bit3 to bit0 are in binary code decimal and
Table 29.
Address A0-A18
Address A0-A18
scaled in 100 mV.
23h-24h
2Ch
2Dh
1Ch
1Dh
2Ah
2Bh
2Eh
2Fh
1Bh
1Eh
1Fh
27h
28h
29h
30h
31h
32h
33h
34h
20h
21h
22h
25h
26h
CFI - device voltage and timing specification
Device geometry definition
Reserved
27h
B4h
C6h
36h
Data
Data
1Eh
15h
03h
00h
00h
00h
02h
00h
00h
01h
07h
00h
20h
00h
04h
00h
0Ah
00h
04h
00h
(1)
(2)
(2)
(1)
2
Device interface sync./async.
Organization sync./async.
Page size in bytes, 2
Bit7-0 = number of erase block regions in device
Number (n-1) of blocks of identical size; n=31
Erase block region information x 256 bytes per erase block
(64 Kbytes)
Number (n-1) of blocks of identical size; n=8
Erase block region information x 256 bytes per erase block
(8 Kbytes)
V
V
V
V
2
2
2
2
2
2
n
n
n
n
n
n
n
DD
DD
PP
PP
number of bytes memory size
ms typical time-out for Word, DWord prog – not available
ms, typical time-out for max buffer write – not available
ms, typical time-out for Erase Block
ms, typical time-out for chip erase – not available
x typical for individual block erase time-out maximum
x typical for chip erase max time-out – not available
min
max
min, 2.7 V
max, 3.6 V
n
Description
Description
Common Flash interface (CFI)
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