M58BW016FB7T3T NUMONYX, M58BW016FB7T3T Datasheet - Page 61

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M58BW016FB7T3T

Manufacturer Part Number
M58BW016FB7T3T
Description
IC FLASH 16MBIT 70NS 80PQFP
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW016FB7T3T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-MQFP, 80-PQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW016FB7T3TCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58BW016FB7T3T
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M58BW016FB7T3T
Manufacturer:
ST
0
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 24. Block erase flowchart and pseudocode
1. If an error is found, the status register must be cleared before further program/erase operations.
Write Block Address
Read Status
b4 and b5
Write 20h
Register
& D0h
b7 = 1
b3 = 0
b5 = 0
b1 = 0
Start
End
= 1
YES
YES
NO
YES
YES
NO
NO
YES
NO
NO
Suspend
Erase to Protected
Sequence Error
V PP Invalid
Block Error
Command
NO
Error (1)
Error (1)
Erase
YES
Suspend
Loop
Erase Command:
– write 20h
– write Block Address
(memory enters read status
state after the Erase command)
do:
– read status register
if Erase command given execute
suspend erase loop
while b7 = 0
If b3 = 1, V PP invalid error:
– error handler
If b4, b5 = 1, Command Sequence error:
– error handler
If b5 = 1, Erase error:
– error handler
If b1 = 1, Erase to Protected Block Error:
– error handler
(A11-A18) & D0h
(E or G must be toggled)
AI03851b
Flowcharts
61/70

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