M58BW016FB7T3T NUMONYX, M58BW016FB7T3T Datasheet - Page 62

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M58BW016FB7T3T

Manufacturer Part Number
M58BW016FB7T3T
Description
IC FLASH 16MBIT 70NS 80PQFP
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW016FB7T3T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-MQFP, 80-PQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW016FB7T3TCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58BW016FB7T3T
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M58BW016FB7T3T
Manufacturer:
ST
0
Flowcharts
Figure 25. Erase suspend & resume flowchart and pseudocode
62/70
Erase Continues
Read data from
another block
Read Status
or Program
Write D0h
Write B0h
Write FFh
Write 70h
Register
b7 = 1
b6 = 1
Start
YES
YES
NO
NO
Erase Complete
Read Data
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Write FFh
Program/Erase Suspend Command:
– write B0h
– write 70h
do:
– read status register
while b7 = 0
If b6 = 0, Erase completed
Read Memory Array command:
– write FFh
– one or more data reads
Program/Erase Resume command:
– write D0h to resume the Erase
– if the Erase operation completed
from other blocks
operation
then this is not necessary. The device
returns to Read mode as normal
(as if the Program/Erase suspend
was not issued).
AI00615b

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