W9425G6EH-5 Winbond Electronics, W9425G6EH-5 Datasheet - Page 42

IC DDR-400 SDRAM 256MB 66TSSOPII

W9425G6EH-5

Manufacturer Part Number
W9425G6EH-5
Description
IC DDR-400 SDRAM 256MB 66TSSOPII
Manufacturer
Winbond Electronics
Datasheet

Specifications of W9425G6EH-5

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
250MHz
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOPII
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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11.8 Auto-precharge Timing (Read Cycle, CL = 2)
1) t
Notes: CL=2 shown; same command operation timing with CL = 2,5 and CL=3
BL=2
BL=4
BL=8
RCD
CMD
DQS
CMD
DQS
CMD
DQS
CLK
CLK
DQ
DQ
In this case, the internal precharge operation begin after BL/2 cycle from READA command.
The Read with Auto-precharge command cannot be interrupted by any other command.
DQ
(READA) ≥ t
AP
Represents the start of internal precharging.
ACT
ACT
ACT
RAS (MIN)
– (BL/2) × t
READA
CK
t
RAS
READA
- 42 -
Q0
Q1
READA
Q2
Q3
Publication Release Date:Dec. 03, 2008
AP
AP
AP
Q0
Q4
Q1
Q5
tRP
Q0
Q2
Q6
W9425G6EH
Q1
Q3
Q7
ACT
ACT
ACT
Revision A08

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