W9425G6EH-5 Winbond Electronics, W9425G6EH-5 Datasheet - Page 54
![IC DDR-400 SDRAM 256MB 66TSSOPII](/photos/28/21/282152/w9425g6eh-5_sml.jpg)
W9425G6EH-5
Manufacturer Part Number
W9425G6EH-5
Description
IC DDR-400 SDRAM 256MB 66TSSOPII
Manufacturer
Winbond Electronics
Datasheet
1.W9425G6EH-5.pdf
(54 pages)
Specifications of W9425G6EH-5
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
250MHz
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOPII
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
W9425G6EH-5
Manufacturer:
WINBOND
Quantity:
1 728
Part Number:
W9425G6EH-5
Manufacturer:
WINBOND/华邦
Quantity:
20 000
13. REVISION HISTORY
Winbond products are not designed, intended, authorized or warranted for use as components
in systems or equipment intended for surgical implantation, atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal
instruments, combustion control instruments, or for other applications intended to support or
sustain life. Further more, Winbond products are not intended for applications wherein failure
of Winbond products could result or lead to a situation wherein personal injury, death or
severe property or environmental damage could occur.
Winbond customers using or selling these products for use in such applications do so at their
own risk and agree to fully indemnify Winbond for any damages resulting from such improper
use or sales.
VERSION
A01
A02
A03
A04
A05
A06
A07
A08
Dec. 12, 2007
Feb. 21, 2008
Aug. 25, 2008
Dec. 03, 2008
Jan. 04, 2008
May 07, 2008
Jun. 06, 2008
Apr. 11, 2008
DATE
4, 5, 23, 25,
4, 5, 23, 25,
4, 5, 16, 25,
30, 31, 32,
26, 27, 30,
26, 27, 29
27, 40, 41
PAGE
33, 34
31, 32
26, 27
5, 25
5, 26
5, 25
All
23
23
27
9
Important Notice
Formally data sheet
Revise -4 speed grade Max.IDD4R/IDD4W value from 190mA to
210mA
Revise -5 speed grade Max. CLK cycle time tCK value from
10nS to 12nS
Change VDDQ max from VDD to 2.7V
Modify -4 speed grade DC Characteristics IDD6 parameter value
from 5mA to 3mA
Add figure to illustrate Initialization sequence after power-up
Revise input setup/hold time tIS/tIH parameters with skew rate
dependency of AC characteristics table
Detailed descriptions of slew rate and overshoot/undershoot is
added in system AC characteristics
Remove -75 grade parts
Revise -4 speed grade AC parameter tWTR from 1 tCK to 2 tCK
Add -5I and -6I industrial grade parts
Add 30% driver strength and -4 grade parts add to support CL4
Revise overshoot/undershoot pulse width
Before VIH (max.) = -1.2V with a pulse width < 3 nS
After VIH (max.) = -1.5V with a pulse width < 5 nS
Before VIL (min.) = VDDQ +1.2V with a pulse width < 3 nS
After VIL (min.) = VDDQ +1.5V with a pulse width < 5 nS
- 54 -
DESCRIPTION
Publication Release Date:Dec. 03, 2008
W9425G6EH
Revision A08