TE28F640J3C115SL7HA Intel, TE28F640J3C115SL7HA Datasheet - Page 5

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TE28F640J3C115SL7HA

Manufacturer Part Number
TE28F640J3C115SL7HA
Description
IC FLASH 64MBIT 115NS 56TSOP
Manufacturer
Intel
Datasheet

Specifications of TE28F640J3C115SL7HA

Format - Memory
FLASH
Memory Type
StrataFlash® FLASH
Memory Size
64M (8Mx8, 4Mx16)
Speed
115ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
56-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
860794
Revision History
Datasheet
Revision
07/07/99
08/03/99
09/07/99
12/16/99
03/16/00
06/26/00
04/13/01
Date of
2/15/01
Version
-001
-002
-003
-004
-005
-006
-007
-008
Original Version
A
Changed Minimum Block Erase time,I
currents. Modified RP# on AC Waveform for Write Operations
Changed Block Erase time and t
Removed all references to 5 V I/O operation
Corrected Ordering Information, Valid Combinations entries
Changed Min program time to 211 µs
Added DU to Lead Descriptions table
Changed Chip Scale Package to Ball Grid Array Package
Changed default read mode to page mode
Removed erase queuing from Figure 10, Block Erase Flowchart
Added Program Max time
Added Erase Max time
Added Max page mode read current
Moved tables to correspond with sections
Fixed typographical errors in ordering information and DC parameter table
Removed V
Added recommended resister value for STS pin
Change operation temperature range
Removed note that rp# could go to 14 V
Removed V
Updated I
Added Max lock-bit program and lock times
Added note on max measurements
Updated cover sheet statement of 700 million units to one billion
Corrected Table 10 to show correct maximum program times
Corrected error in Max block program time in section 6.7
Corrected typical erase time in section 6.7
Updated cover page to reflect 100K minimum erase cycles
Updated cover page to reflect 110 ns 32M read speed
Removed Set Read Configuration command from Table 4
Updated Table 8 to reflect reserved bits are 1-7; not 2-7
Updated Table 16 bit 2 definition from R to PSS
Changed V
Characteristics
Updated 32Mbit Read Parameters R1, R2 and R3 to reflect 110ns, Section 6.5,
AC Characteristics–Read-Only Operations
Updated write parameter W13 (t
Characteristics–Write Operations
Updated Max. Program Suspend Latency W16 (t
Section 6.7, Block Erase, Program, and Lock-Bit Configuration Performance
(1,2,3)
Revised Section 7.0, Ordering Information
0
–A
2
indicated on block diagram
CCR
PENLK
CCQ1
OL
Typ values
of 0.45 V; Removed V
setting and changed V
Max voltage from 0.8 V to 2.0 V, Section 6.4, DC
WHRL
AVWH
Description
OH
) from 90 ns to 500 ns, Section 6.6, AC
OL
CCQ2/3
, I
of 2.4 V
OH
(1,2)
, Page Mode and Byte Mode
to V
WHRH1
CCQ1/2
) from 30 to 75 µs,
Contents
5

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