TE28F640J3C115SL7HA Intel, TE28F640J3C115SL7HA Datasheet - Page 55

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TE28F640J3C115SL7HA

Manufacturer Part Number
TE28F640J3C115SL7HA
Description
IC FLASH 64MBIT 115NS 56TSOP
Manufacturer
Intel
Datasheet

Specifications of TE28F640J3C115SL7HA

Format - Memory
FLASH
Memory Type
StrataFlash® FLASH
Memory Size
64M (8Mx8, 4Mx16)
Speed
115ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
56-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
860794
A.5
A.6
Datasheet
Table 27. CFI Identification (Sheet 2 of 2)
Table 28. System Interface Information
Table 29. Device Geometry Definition (Sheet 1 of 2)
System Interface Information
The following device information can optimize system interface software.
Device Geometry Definition
This field provides critical details of the flash device geometry.
Offset
Offset
Offset
1Bh
1Ch
1Dh
1Eh
1Fh
2Ah
19h
20h
21h
22h
23h
24h
25h
26h
27h
28h
Length
Length
Length
2
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
0000h means no second vendor-specified algorithm exists
Secondary algorithm Extended Query Table address.
0000h means none exists
V
V
V
V
“n” such that typical single word program time-out = 2
“n” such that typical max. buffer write time-out = 2
“n” such that typical block erase time-out = 2
“n” such that typical full chip erase time-out = 2
“n” such that maximum word program time-out = 2
typical
“n” such that maximum buffer write time-out = 2
“n” such that maximum block erase time-out = 2
“n” such that maximum chip erase time-out = 2
“n” such that device size = 2
Flash device interface: x8 async x16 async x8/x16 async
“n” such that maximum number of bytes in write buffer = 2
CC
CC
PP
PP
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
[programming] supply minimum program/erase voltage
[programming] supply maximum program/erase voltage
logic supply minimum program/erase voltage
logic supply maximum program/erase voltage
28:00,29:00 28:01,29:00 28:02,29:00
Description
Description
Description
n
in number of bytes
n
ms
n
n
n
n
times typical
ms
times typical
times typical
n
n
µs
times
n
µs
n
256-Mbit J3 (x8/x16)
Add.
Add.
1C:
1D:
1A:
1B:
1E:
1F:
18:
19:
20:
21:
22:
23:
24:
25:
26:
2A:
2B:
27:
28:
29:
Code See Table
Code
Code
--0A
Hex
--00
--00
--00
Hex
--27
--36
--00
--00
--08
--08
--00
--04
--04
--04
--00
Below
--02
--00
--05
--00
256 µs
256 µs
Value
Value
2.7 V
3.6 V
0.0 V
0.0 V
2 ms
2 ms
16 s
1 s
NA
NA
x16
x8/
32
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