R1LP0408CSP-7LI#A0 Renesas Electronics America, R1LP0408CSP-7LI#A0 Datasheet
R1LP0408CSP-7LI#A0
Specifications of R1LP0408CSP-7LI#A0
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R1LP0408CSP-7LI#A0 Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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... The R1LP0408C 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LP0408C-I Series offers low power standby power dissipation; therefore suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II. ...
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... R1LP0408C-I Series Ordering Information Type No. Access time R1LP0408CSP-5SI 55 ns R1LP0408CSP-7LI 70 ns R1LP0408CSB-5SI 55 ns R1LP0408CSB-7LI 70 ns R1LP0408CSC-5SI 55 ns R1LP0408CSC-7LI 70 ns Rev.2.00, May.26.2004, page Package 525-mil 32-pin plastic SOP (32P2M-A) 400-mil 32-pin plastic TSOP II (32P3Y-H) 400-mil 32-pin plastic TSOP II reverse (32P3Y-J) ...
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R1LP0408C-I Series Pin Arrangement 32-pin SOP 32-pin TSOP 1 32 A18 2 31 A16 3 30 A14 4 29 A12 ...
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... A18 A10 A13 A17 A16 A14 A12 MSB I/O0 I/O7 CS# Timing Pulse Generator WE# OE# Rev.2.00, May.26.2004, page • • • Memory Matrix Row • × 2,048 2,048 • Decoder • Column I/O • Input Column Decoder Data Control LSB A3 A2A1A0 A4 A5 • ...
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R1LP0408C-I Series Operation Table WE# CS# OE# Mode × × H Not selected Output disable Read Write Write , ×: V Note ...
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R1LP0408C-I Series DC Characteristics Parameter Input leakage current Output leakage current Operating current Average operating current Standby current −5SI Standby current to +85°C to +70°C to +40°C to +25°C −7LI to +85°C to +70°C to +40°C to +25°C Output low ...
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R1LP0408C-I Series AC Characteristics (Ta = −40 to +85° ± 10%, unless otherwise noted.) CC Test Conditions • Input pulse levels 0 • Input rise and fall time • ...
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R1LP0408C-I Series Write Cycle Parameter Write cycle time Chip selection to end of write Address setup time Address valid to end of write Write pulse width Write recovery time Write to output in high-Z Data to write time overlap Data ...
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R1LP0408C-I Series Timing Waveform Read Timing Waveform (WE Address CS# OE# High impedance Dout Rev.2.00, May.26.2004, page Valid address OLZ t HZ ...
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R1LP0408C-I Series Write Timing Waveform (1) (OE# Clock) Address OE# CS# WE# Dout Din Rev.2.00, May.26.2004, page Valid address OHZ High impedance t DW Valid ...
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R1LP0408C-I Series Write Timing Waveform (2) (OE# Low Fixed) Address CS# WE Dout Din Rev.2.00, May.26.2004, page Valid address WHZ High ...
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R1LP0408C-I Series Low V Data Retention Characteristics CC (Ta = −40 to +85°C) Parameter V for data retention CC −5SI Data to +85°C retention to +70°C current to +40°C to +25°C −7LI to +85°C to +70°C to +40°C to +25°C ...
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Revision History Rev. Date Contents of Modification Page Description 1.00 Aug.01.2003 Initial issue 2.00 May.26.2004 6 DC characteristics −5SI and −7LI items’ description are divided. 12 Low V −5SI and −7LI items’ description are divided. 12 Low V 2.4 ...
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Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...