MD8331-D2G-V3-X-P SanDisk, MD8331-D2G-V3-X-P Datasheet - Page 77

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MD8331-D2G-V3-X-P

Manufacturer Part Number
MD8331-D2G-V3-X-P
Description
IC MDOC G4 2GB 69-FBGA
Manufacturer
SanDisk
Datasheet

Specifications of MD8331-D2G-V3-X-P

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Speed
33ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
69-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
585-1149-2
MD8831-D2G-V3-X-P
MD8832-D2G-V3-X-P

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MD8331-D2G-V3-X-P
Manufacturer:
INTEL
Quantity:
480
Part Number:
MD8331-D2G-V3-X-P
Manufacturer:
M-SYSTEM
Quantity:
586
Part Number:
MD8331-D2G-V3-X-P
Manufacturer:
SanDisk
Quantity:
10 000
Part Number:
MD8331-D2G-V3-X-P/Y
Manufacturer:
SanDisk
Quantity:
10 000
1.
2.
3.
4.
5.
6.
7.
8.
9.
10. Applicable only if HOLD=0, FIFO=1, INV=1 in the Burst Mode Control Register.
11. Applicable only if HOLD=1, FIFO=0, INV=1 in the Burst Mode Control Register.
12. Applicable only with the SRAM interface. For the Muxed interface, Tsu(AVD), Tho(AVD), Tw(AVD) and Tho(AVD-OE) apply as shown in
77
CE# may be asserted any time before or after OE# is asserted. If CE# is asserted after OE#, all timing relative to OE# asserted will be referenced
instead to the time of CE# asserted.
CE# may be negated any time before or after OE# is negated. If CE# is negated before OE#, all timing relative to OE# negated will be
referenced instead to the time of CE# negated.
No load (CL = 0 pF).
Applicable only if CLK_INV bit of the Burst Mode Control Register 0.
Applicable only if CLK_INV bit of the Burst Mode Control Register is 1.
Applicable only if HOLD=0, FIFO=0, INV=0 in the Burst Mode Control Register.
Applicable only if HOLD=0, FIFO=1, INV=0 in the Burst Mode Control Register.
Applicable only if HOLD=1, FIFO=0, INV=0 in the Burst Mode Control Register.
Applicable only if HOLD=0, FIFO=0, INV=1 in the Burst Mode Control Register.
Table 12 and Figure 22.
T
REC
T
T
Symbol
T
W
T
T(CLK)
REC
Tho(A)
Tsu(A)
(OE-CLK1)
LOZ
HIZ
(CLK0)
(OE)
(D)
(D)
CLK high pulse width
CLK low pulse width
CLK low pulse width
CLK low pulse width
CLK low pulse width
CLK low pulse width
CLK low pulse width
CLK period
CLK period
CLK period
CLK period
CLK period
CLK period
OE# negated to start of next
cycle
OE#
OE#
Address to OE#
OE#
OE#
edge which samples OE_ low
(trec(OE) + tsu(OE0-CLK1)
OE#
edge after falling edge which
samples OE_ low (trec(OE) +
tsu(OE0-CLK0) + tw(CLK0))
2
to D driven
to D Hi-Z delay
setup to next CLK rising
setup to next CLK rising
Data Sheet (Preliminary) Rev. 0.3
to Address hold time
Description
6
7
8
9
10
11
1, 3
6
7
8
9
10
11
setup time
11
2
4,5
4,5
1,12
1,12
DiskOnChip G4 128MB (1Gb)/256MB (2Gb) 1.8V
VCC=1.65-1.95V
Min
19
19
12
12
55
32
32
50
32
31
17
31
24
28
-8
VCCQ=VCC
8
8
8
Max
20
3
Units
Ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
92-DS-1105-00

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