MD8331-D2G-V3-X-P SanDisk, MD8331-D2G-V3-X-P Datasheet - Page 80

• Manufacturer Part Number: MD8331-D2G-V3-X-P
• Description: IC MDOC G4 2GB 69-FBGA
• Manufacturer: SanDisk

Specifications of MD8331-D2G-V3-X-P

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Speed: 33ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 69-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 585-1149-2; MD8831-D2G-V3-X-P; MD8832-D2G-V3-X-P

1.
2.
3.
80
(Muxed Mode Only)
Specified from the final positive crossing of VCC above 1.65V and VCCQ above 1.65.
Normal read/write cycle timing applies. This parameter applies only when the cycle is extended until the negation of the BUSY# signal.
If the assertion of RSTIN# occurs during a flash erase cycle, this time could be extended by up to 500 µS.
T
operating specifications
Tsu (RSTIN-AVD)
Tsu (DPD-AVD)
D (Read cycle)
T
VCC & VCCQ within
REC
T
Tp (RSTIN-D)
Trise (RSTIN)
P
T
SU
T
T
T
DPD (A[0])
P
(VCC-BUSY0)
(WE# = 1)
CE#, OE#
P
P
W
Symbol
(VCC-RSTIN)
(DPD-D)
(D-BUSY1)
RSTIN#
BUSY#
A[12:0]
(BUSY0)
(BUSY1)
(RSTIN)
AVD#
VCC
5,6
5
7
4,6
4
VCC/VCCQ stable to RSTIN#
RSTIN# asserted pulse width
RSTIN#
RSTIN#
Data valid to BUSY#
VCC/VCCQ stable to BUSY#
RSTIN#
DPD transition to AVD#
RSTIN#
DPD transition to Data valid
RSTIN# rise time
T
P
Table 16: Power-Up Timing Parameters
(VCC-BUSY0)
T
REC
T
SU
Data Sheet (Preliminary) Rev. 0.3
(VCC-RSTIN)
(RSTIN-AVD)
T
T
P
Figure 25: Reset Timin g
SU
T
(RSTIN-D)
P
to BUSY#
to BUSY#
to AVD#
to Data valid
(DPD-AVD)
(DPD-D)
Description
7
4
2
T
3
P
(BUSY1)
4,6
5,6
1
T
VALID
SU
DiskOnChip G4 128MB (1Gb)/256MB (2Gb) 1.8V
(D-BUSY1)
Min
500
600
700
4.2
4.4
50
0
T
P
Max
(BUSY0)
500
6.1
T
50
10
20
W
(RSTIN)
92-DS-1105-00
Units
ms
µs
ns
ns
ns
µs
µs
ns
µs
ns
ns