MD5811-D256-V3Q18-P SanDisk, MD5811-D256-V3Q18-P Datasheet - Page 73

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MD5811-D256-V3Q18-P

Manufacturer Part Number
MD5811-D256-V3Q18-P
Description
IC MDOC P3 256MB 48-TSOP
Manufacturer
SanDisk
Datasheet

Specifications of MD5811-D256-V3Q18-P

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
256M (32M x 8)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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11.2.4 AC Operating Conditions
Timing specifications are based on the conditions defined below.
70
I
I
I
V
V
I
I
Symbol
OLmax
ILK
IOLK
CC
CCS
OH
OL
1.
2.
3.
VCC = VCCQ = 3.3V, Outputs open
The CE# input includes a pull-up resistor which sources 0.3~1.4 (TBD) µA at Vin=0V
Deep Power-Down mode is achieved by asserting RSTIN# (when in Normal mode) or writing the proper write sequence to the
DiskOnChip registers, and asserting the CE# input = VCCQ.
Ambient temperature (TA)
Core supply voltage (VCC)
Input pulse levels
Input rise and fall times
Input timing levels
Output timing levels
Output load
Maximum low-level output
current
Input leakage current
Output leakage current
High-level output voltage
Low-level output voltage
Active supply current,
VCC+VCCQ pins/balls
Standby supply current,
VCC+VCCQ pins/balls
Parameter
Parameter
2
1
Table 12: AC Characteristics
I
3.0V < VCCQ < 3.6V
2.5V < VCCQ < 3.0V
I
2.5V < VCCQ < 2.7V
I
2.5V < VCCQ < 3.6V
Cycle Time = 100 ns
Deep Power-Down mode
OH =
OH =
OL=
Data Sheet, Rev. 0.3
I
I
I
OLmax
Ohmax
Ohmax
Conditions
VCCQ = 1.65-2.0V
0.2/VCCQ-0.2V
-40°C to +85°C
2.5V to 3.6V
30 pF
0.9V
0.9V
3 ns
3
VCCQ-
Min
0.3
2.4
8
5
VCCQ = 2.5-3.6V
-40°C to +85°C
2.5V to 3.6V
0V/2.5V
100 pF
Typ
10
10
1.5V
1.5V
3 ns
Mobile DiskOnChip P3
Max
±10
±10
0.4
45
40
93-SR-009-8L
Unit
mA
mA
mA
µA
µA
µA
V
V

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