MD5811-D256-V3Q18-P SanDisk, MD5811-D256-V3Q18-P Datasheet - Page 75

• Manufacturer Part Number: MD5811-D256-V3Q18-P
• Description: IC MDOC P3 256MB 48-TSOP
• Manufacturer: SanDisk

Specifications of MD5811-D256-V3Q18-P

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 256M (32M x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

72
Tho(CE0)
Tho(CE1)
Tsu(CE0)
Tsu(CE1)
Trec(OE)
tho(A-D)
Symbol
Tloz(D)
Thiz(D)
tacc(A)
Tsu(A)
Tho(A)
Tacc
1.
2.
3.
4.
Add 260 ns (TBD) on the first read cycle when exiting Power-Down mode. See Section 6.3 for more information.
CE# may be asserted any time before or after OE# is asserted. If CE# is asserted after OE#, all timing relative to when OE# was asserted
will be referenced to the time CE# was asserted.
CE# may be negated any time before or after OE# is negated. If CE# is negated before OE#, all timing relative to when OE# was negated
will be referenced to the time CE# was negated.
No load (C
Address to OE#
OE#
CE#
OE#
OE# or WE#
CE#
OE# negated to start of next cycle
Read access time
(RAM)
Read access time (all
other addresses)
OE#
OE#
OE#
RAM Read access
time from A[9:0]
Data hold time from
A[9:0] (RAM)
L
= 0 pF).
1
to OE#
to WE#
to D driven
to D driven
to Address hold time
to CE#
to D Hi-Z delay
Table 13: Standard Interface Read Cycle Timing Parameters
Description
to CE#
3
setup time
hold time
or OE#
4
4
setup time
4
Turbo operation
Normal operation
Turbo operation
Normal operation
Turbo operation
Normal operation
Asynchronous
Boot mode
Asynchronous
Boot mode
hold time
3
1
2
setup time
Data Sheet, Rev. 0.3
VCC=2.5-3.6V
Min
24
20
14
—
—
-2
VCCQ=VCC
5
5
5
0
Max
TBD
87
84
33
55
76
VCCQ=1.65-2.0V
VCC=2.5-3.6V
Min
24
20
14
—
—
-2
5
5
5
0
Mobile DiskOnChip P3
TBD
Max
88
85
34
56
77
93-SR-009-8L
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns