MD5811-D256-V3Q18-P SanDisk, MD5811-D256-V3Q18-P Datasheet - Page 76

• Manufacturer Part Number: MD5811-D256-V3Q18-P
• Description: IC MDOC P3 256MB 48-TSOP
• Manufacturer: SanDisk

Specifications of MD5811-D256-V3Q18-P

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 256M (32M x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

11.3.2 Write Cycle Timing Standard Interface
73
Tho(CE0)
Tho(CE1)
Tsu(CE0)
Tsu(CE1)
Trec(WE)
Symbol
Tw(WE)
T
Tho(A)
Tsu(D)
Tho(D)
1.
2.
SU
(A)
CE# may be asserted any time before or after WE# is asserted. If CE# is asserted after WE#, all timing relative to WE# asserted should be
referenced to the time CE# was asserted.
CE# may be negated any time before or after WE# is negated. If CE# is negated before WE#, all timing relative to WE# negated will be
referenced to the time CE# was negated.
A[12:0]
D[15:0]
Address to WE#
WE#
WE# asserted width (RAM)
WE# asserted width (all other addresses)
CE#
WE#
OE# or WE#
CE#
WE#
D to WE#
WE#
WE#
OE#
CE#
to WE#
to WE#
to Address hold time
to CE#
to start of next cycle
to D hold time
t
HO
Table 14: Standard Interface Write Cycle Parameters
setup time
(CE1)
Figure 25: Standard Interface Write Cycle Timing
Description
t
to CE#
SU
setup time
hold time
or OE#
(A)
setup time
t
SU
(CE0)
hold time
2
1
setup time
Data Sheet, Rev. 0.3
t
HO
(A)
t
WCYC
t
W
(WE)
VCC=2.5-3.6V
Min
24
38
36
20
27
-2
VCCQ=VCC
--
--
5
5
0
t
SU
(D)
t
HO
Max
(CE0)
t
HO
t
VCCQ=1.65-2.0V
REC
(D)
VCC=2.5-3.6V
Min
24
38
36
20
27
-2
--
--
5
5
0
t
(WE)
SU
(CE1)
Mobile DiskOnChip P3
Max
93-SR-009-8L
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns