MD5811-D256-V3Q18-P SanDisk, MD5811-D256-V3Q18-P Datasheet - Page 77

• Manufacturer Part Number: MD5811-D256-V3Q18-P
• Description: IC MDOC P3 256MB 48-TSOP
• Manufacturer: SanDisk

Specifications of MD5811-D256-V3Q18-P

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 256M (32M x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

11.3.3 Read Cycle Timing Multiplexed Interface
74
t
HO
tsu(AVD)
tho(AVD)
Tw(AVD)
tsu(CE0)
tho(CE0)
tho(CE1)
tsu(CE1)
trec(OE)
Symbol
1.
2.
3.
Thiz(D)
(AVD-OE)
tloz(D)
Tacc
CE# may be asserted any time before or after OE# is asserted. If CE# is asserted after OE#, all timing relative to OE# asserted will be
referenced instead to the time of CE# asserted.
CE# may be negated any time before or after OE# is negated. If CE# is negated before OE#, all timing relative to OE# negated will be
referenced instead to the time of CE# negated.
No load (C
AD[15:0]
AVD#
WE#
OE#
CE#
L
Address to AVD#
Address to AVD#
AVD# low pulse width
AVD#
CE#
OE#
OE# or WE#
CE#
OE# negated to start of next cycle
Read access time
(RAM)
Read access time
(all other addresses)
OE#
OE#
= 0 pF).
t
HO
(CE1)
to OE#
to WE#
to CE#
to D driven
to D Hi-Z delay
t
Table 15: Multiplexed Interface Read Cycle Parameters
to OE#
SU
Figure 26: Multiplexed Interface Read Cycle Timing
(AVD)
Description
t
W
to CE#
(AVD)
ADDR
setup time
hold time
or OE#
3
t
SU
hold time
setup time
hold time
(CE0)
3
Turbo operation
Normal operation
Turbo operation
Normal operation
Turbo operation
Normal operation
t
HO
t
HO
hold time
(AVD)
Data Sheet, Rev. 0.3
2
(AVD-OE)
1
1
setup time
t
ACC
t
VCC=2.5-3.6V
HO
Min
VCCQ=VCC
12
20
14
—
—
5
7
0
5
5
5
(CE0)
DATA
t
HIZ
t
TBD
Max
REC
87
84
33
55
(D)
t
SU
(OE)
(CE1)
VCCQ=1.65-2.0V
VCC=2.5-3.6V
Min
12
20
14
—
—
5
7
0
5
5
5
Mobile DiskOnChip P3
Max
TBD
88
85
34
56
93-SR-009-8L
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns