SDED5-512M-N9Y SanDisk, SDED5-512M-N9Y Datasheet - Page 44

• Manufacturer Part Number: SDED5-512M-N9Y
• Description: IC MDOC H3 4GB 115-FBGA
• Manufacturer: SanDisk

Specifications of SDED5-512M-N9Y

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 4G (512M x 8)
• Interface: Parallel
• Voltage - Supply: 1.65 V ~ 1.95 V
• Operating Temperature: -25°C ~ 85°C
• Package / Case: 115-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Rev. 1.3
7.3.8 DPD Activation Register
Description:
Address (hex): 9416 (128KB window) / 1416 (8KB window)
Type:
7.3.9 DMA Control Register
Description:
Address (hex): 940E (128KB window) / 140E (8KB window)
Type:
44
WAKE_UP_SEL_BIT
Bit number
Read/Write
Bit name
Reset value
POWER_DN
Bit number
Read/Write R
Bit name
Reset value
PULSE_WIDTH
EDGE
DMA_POL
D15-D1
R
RFU
0
D15-D9
RFU
0
This 16-bit register is used to put mDOC H3 into Deep Power Down mode.
Read / Write
This 16-bit register controls the DMA_REQ signal to the host.
Read / Write
The width of the DMARQ# signal will be:
PULSE_WIDTH * ICMU_CLK (cycle). Maximum 32 ICMU clocks.
Note: If the value is zero then DMARQ# signal will not be asserted.
Level or Edge:
0: Level – DMARQ# will be asserted when data is ready and will be de-asserted
before the end of the data according to DMA_PROG_NEG (DMA Negation).
1: Edge – DMARQ# will be generated for the number of clock specified in the
PULSE_WIDTH field.
DMARQ# polarity:
0: active high
Setting this bit to ‘1’ will put the device to Deep Power Down mode.
D8-D4
R/W
PULSE_WIDTH RFU
4
Selects the device wake up trigger
0: mDOC H3 CE# is the wakeup trigger.
1: Read access (CE# & OE# assertion) or write access (CE# and WE#
assertion) is the wakeup trigger.
D3
R
0
mDOC H3 EFD Featuring Embedded TrueFFS Data Sheet
D2
R/W
EDGE
0
D1
R/W
DMA_POL
1
D0
W
POWER_DN
0
mDOC H3 Registers
D0
R/W
DMA_EN
0
92-DS-1205-10