SDED5-512M-N9Y SanDisk, SDED5-512M-N9Y Datasheet - Page 59

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SDED5-512M-N9Y

Manufacturer Part Number
SDED5-512M-N9Y
Description
IC MDOC H3 4GB 115-FBGA
Manufacturer
SanDisk
Datasheet

Specifications of SDED5-512M-N9Y

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
4G (512M x 8)
Interface
Parallel
Voltage - Supply
1.65 V ~ 1.95 V
Operating Temperature
-25°C ~ 85°C
Package / Case
115-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-

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Rev. 1.3
Notes: 1. Note: AVD must be asserted on the following clock after the assertion of CE.
9.8.2.2
The Write mode is similar to the Read mode with the following exceptions:
Note: WE is sampled on the 1
59
clock cycle, after that the status of the WE signal is not important (Ø).
2. No collision should be allowed between the AVD and OE signal.
WAIT_STATE = 0: 1 clock added.
WAIT_STATE = 1: 2 clocks added.
WAIT_STATE = 2: 3 clocks added.
WAIT_STATE = 3: 4 clocks added.
Burst CLK
Data
AVD
Write Mode
OE
CE
Valid address
Figure 17: Multiplexed Read Busrt Mode
st
Figure 1818: Demux Write Burst Mode
Latency=1
clock after CE assertion. It must be active (low) for at least one
D0
D1
mDOC H3 EFD Featuring Embedded TrueFFS Data Sheet
D2
D3
D4
D5
D6
Design Considerations
D7
92-DS-1205-10

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