FSFR2100 Fairchild Semiconductor, FSFR2100 Datasheet - Page 4

IC SWIT PROG OVP OCP 9SIP

FSFR2100

Manufacturer Part Number
FSFR2100
Description
IC SWIT PROG OVP OCP 9SIP
Manufacturer
Fairchild Semiconductor
Series
FPS™r
Datasheet

Specifications of FSFR2100

Output Isolation
Isolated
Frequency Range
94kHz ~ 106kHz
Voltage - Input
9.6 V ~ 25 V
Voltage - Output
500V
Power (watts)
400W
Operating Temperature
-40°C ~ 130°C
Package / Case
9-SIP
Output Voltage
24 V
Output Current
8.3 A
Output Power
450 W
Switching Frequency
300 KHz
Operating Temperature Range
- 40 C to + 130 C
Mounting Style
Through Hole
Duty Cycle (max)
52 %
Isolated/non-isolated
Isolated
For Use With
FEB212 - BOARD EVAL FOR FSFR2100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FSFR2100
Manufacturer:
FAIRCHILD
Quantity:
32
Company:
Part Number:
FSFR2100,,10,SIP-9,FAIRCHILD
0
Part Number:
FSFR2100U
Manufacturer:
Fairchild Semiconductor
Quantity:
1 885
Part Number:
FSFR2100XS
Manufacturer:
RENESAS
Quantity:
2 500
© 2007 Fairchild Semiconductor Corporation
FSFR2100 • Rev.1.0.8
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. T
Notes:
3.
4.
5.
Thermal Impedance
T
MOSFET Section
Package Section
HV
A
Symbol
=25°C unless otherwise specified.
Symbol
dV
Torque
CC
Per MOSFET when both MOSFETs are conducting.
The maximum value of the recommended operating junction temperature is limited by thermal shutdown.
Pulse width is limited by maximum junction temperature.
θ
HV
LV
V
V
T
V
V
V
V
JC
I
CTR
P
T
CON
DGR
STG
DM
I
to V
DS
CS
RT
GS
D
D
CC
J
CC
/dt
CTR
Junction-to-Case Center Thermal Impedance (Both MOSFETs Conducting)
Maximum Drain-to-Source Voltage (V
Low-Side Supply Voltage
High-Side V
High-Side Floating Supply Voltage
Control Pin Input Voltage
Current Sense (CS) Pin Input Voltage
R
Allowable Low-Side MOSFET Drain Voltage Slew Rate
Total Power Dissipation
Maximum Junction Temperature
Recommended Operating Junction Temperature
Storage Temperature Range
Drain Gate Voltage (R
Gate Source (GND) Voltage
Drain Current Pulsed
Continuous Drain Current
Recommended Screw Torque
T
Pin Input Voltage
CC
Pin to Low-side Drain Voltage
(5)
GS
(3)
=1MΩ)
Parameter
Parameter
(4)
A
=25°C unless otherwise specified.
DL
-V
CTR
4
and V
(4)
CTR
T
T
C
C
=25°C
=100°C
-PG)
Min.
600
-0.3
-0.3
-0.3
-0.3
-5.0
-0.3
600
-40
-55
5~7
Max.
625.0
Value
LV
+150
+130
+150
25.0
25.0
10.44
±30
1.0
5.0
50
12
33
11
7
CC
www.fairchildsemi.com
kgf·cm
Unit
V/ns
ºC/W
Unit
°C
°C
W
V
V
V
V
V
V
V
V
V
A
A