S-8261ABSMD-G3ST2G Seiko Instruments, S-8261ABSMD-G3ST2G Datasheet

IC LI-ION BATT PROTECT SOT23-6

S-8261ABSMD-G3ST2G

Manufacturer Part Number
S-8261ABSMD-G3ST2G
Description
IC LI-ION BATT PROTECT SOT23-6
Manufacturer
Seiko Instruments
Datasheet

Specifications of S-8261ABSMD-G3ST2G

Function
Over/Under Voltage Protection
Battery Type
Lithium-Ion (Li-Ion), Lithium-Polymer (Li-Pol)
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Output Voltage
4.28 V
Operating Supply Voltage
1.5 V to 28 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S-8261ABSMD-G3ST2G
Manufacturer:
SII Semiconductor Corporation
Quantity:
187
© Seiko Instruments Inc., 2001-2010
The S-8261 series are lithium-ion / lithium polymer rechargeable battery protection ICs incorporating high-accuracy voltage
detection circuit and delay circuit.
The S-8261 series are suitable for protection of single-cell lithium ion/lithium polymer battery packs from overcharge,
overdischarge and overcurrent.
www.sii-ic.com
Features
Applications
Package
(6)
*3. Refer to “ Product Name Structure” for details.
(1)
(2)
(3)
(4)
(5)
(7)
(8)
(9)
(10) Lead-free, Sn 100%, halogen-free
*1. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage (where overcharge
*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage (where
• Lithium-ion rechargeable battery packs
• Lithium polymer rechargeable battery packs
• SOT-23-6
release voltage < 3.8 V is prohibited.)
overdischarge release voltage > 3.4 V is prohibited.)
Internal high accuracy voltage detection circuit
• Overcharge detection voltage
• Overcharge hysteresis voltage
• Overdischarge detection voltage
• Overdischarge hysteresis voltage
• Overcurrent 1 detection voltage
• Overcurrent 2 detection voltage
High voltage device is used for charger connection pins (VM and CO pins: absolute maximum rating = 28 V).
Delay times (overcharge: t
internal circuit. No external capacitor is necessary.
Three-step overcurrent detection circuit is included (overcurrent 1, overcurrent 2 and load short-circuiting).
0 V battery charge function “Available” / “Unavailable” are selectable.
Power-down function “Yes” / “No” are selectable.
Charger detection function and abnormal charge current detection function
• The overdischarge hysteresis is released by detecting negative voltage at the VM pin (−0.7 V typ.) (Charger
• When the output voltage of the DO pin is high and the voltage at the VM pin is equal to or lower than the charger
Low current consumption
• Operation mode
• Power-down mode
Wide operating temperature range −40°C to +85°C
detection voltage (−0.7 V typ.), the output voltage of the CO pin goes low (Abnormal charge current detection
function).
The overcharge hysteresis voltage can be selected from the range 0.1 V to 0.4 V in 50 mV step.
The overdischarge hysteresis voltage can be selected from the range 0.0 V to 0.7 V in 100 mV step.
detection function).
3.5 μA typ., 7.0 μA max.
0.1 μA max.
CU
, overdischarge: t
*3
BATTERY PROTECTION IC FOR 1-CELL PACK
3.9 V to 4.4 V (applicable in 5 mV step)
0.1 V to 0.4 V
2.0 V to 3.0 V (applicable in 10 mV step)
0.0 V to 0.7 V
0.05 V to 0.3 V (applicable in 10 mV step) Accuracy: ±15 mV
0.5 V (fixed)
Seiko Instruments Inc.
DL
, overcurrent 1: t
*1
*2
lOV1
, overcurrent 2: t
Accuracy: ±25 mV (+25°C) and
Accuracy: ±25 mV
Accuracy: ±50 mV
Accuracy: ±50 mV
Accuracy: ±100 mV
Accuracy: ±20%
S-8261 Series
lOV2
) are generated by an
±30 mV (−5°C to +55°C)
Rev.5.0
_00
1

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S-8261ABSMD-G3ST2G Summary of contents

Page 1

... The overdischarge hysteresis is released by detecting negative voltage at the VM pin (−0.7 V typ.) (Charger detection function). • When the output voltage of the DO pin is high and the voltage at the VM pin is equal to or lower than the charger detection voltage (−0.7 V typ.), the output voltage of the CO pin goes low (Abnormal charge current detection function) ...

Page 2

... LOW DROPOUT CMOS VOLTAGE REGULATOR S-8261 Series Block Diagram 0 V battery charge circuit battery charge DO inhibition circuit CO R VMD VM R VMS Remark All the diodes shown in the figure are parasitic diodes Output control circuit Divider control circuit Charger detection circuit + − Overcurrent 1 detection comparator + − ...

Page 3

... Refer to the “3. Product Name List”. 2. Package Package name SOT-23-6 LOW DROPOUT CMOS VOLTAGE REGULATOR Environmental code U : Lead-free (Sn 100%), halogen-free G : Lead-free (for details, please contact our sales office) IC direction in tape specifications T2: SOT-23-6 Product name (abbreviation) Package name (abbreviation) MD: SOT-23-6 Serial code ...

Page 4

... S-8261ACKMD-G4KT2x 4.280 V S-8261ACMMD-G4MT2x 4.325 V S-8261ACNMD-G4NT2x 4.215 V *1. Refer to the Table 2 about the details of the delay time combinations (1) to (9). Remark 1. Please contact our sales office for the products with detection voltage value other than those specified above Please select products of environmental code = U for Sn 100%, halogen-free products. ...

Page 5

... Remark The delay times can be changed within the range listed Table 3. For details, please contact our sales office. Delay time Overcharge detection delay time Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time Remark The value surrounded by bold lines is the delay time of the standard products ...

Page 6

... Figure 2 6 Table 4 Pin No. Symbol FET gate control pin for discharge 1 DO (CMOS output) Voltage detection pin between VM and VSS 2 VM (Overcurrent detection pin) FET gate control pin for charge 3 CO (CMOS output Test pin for delay time measurement 5 VDD Positive power input pin ...

Page 7

... Board size : (2) Board name : JEDEC STANDARD51-7 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. (1) When mounted on board 700 ...

Page 8

... Internal resistance between VM and VSS 0 V BATTERY CHARGING FUNCTION 0 V battery charge starting charger voltage 0 V battery charge inhibition battery voltage V *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. 8 Table 6 ...

Page 9

... V BATTERY CHARGING FUNCTION 0 V battery charge starting charger voltage 0 V battery charge inhibition battery voltage V *1. Since products are not screened at high and low temperatures, the specification for this temperature range is tested in production. guaranteed by design, not LOW DROPOUT CMOS VOLTAGE REGULATOR ...

Page 10

... Overcharge detection delay time Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. 10 Table 8 Symbol Condition ⎯ ...

Page 11

... Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. LOW DROPOUT CMOS VOLTAGE REGULATOR Table 10 ...

Page 12

... Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. (6) S-8261ABY, S-8261ABZ, S-8261ACA Item DELAY TIME (Ta = 25° ...

Page 13

... Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. LOW DROPOUT CMOS VOLTAGE REGULATOR Table 14 ...

Page 14

... Overcharge detection delay time Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. 14 Table 16 Symbol Condition ⎯ ...

Page 15

... Test Condition 2, Test Circuit 2 (Overdischarge Detection Voltage, Overdischarge Hysteresis Voltage) The overdischarge detection voltage (V “H” to “L” when the voltage V1 is gradually decreased from the starting condition 3.5 V and The overdischarge hysteresis voltage (V voltage (V ) and the voltage between VDD and VSS at which V DL gradually increased ...

Page 16

... V to 1.6 V under the set condition 3.5 V and The abnormal charge current detection delay time is the time needed for V V2 momentarily decreases (within 10 μs) from −1.1 V under the set condition 3.5 V and The abnormal charge current detection delay time has the same value as the overcharge detection delay time. ...

Page 17

... R1 = VDD S-8261 Series V1 VSS COM Test Circuit VDD S-8261 Series V1 VSS DO COM Test Circuit 3 VDD S-8261 Series V1 VSS DO Oscilloscope COM Test Circuit 5 LOW DROPOUT CMOS VOLTAGE REGULATOR Oscilloscope Figure 4 Seiko Instruments Inc. S-8261 Series DD A VDD DP S-8261 Series VM VSS ...

Page 18

... Overcurrent Status (Detection of Overcurrent 1, Overcurrent 2 and Load Short-circuiting) When a battery in the normal status is in the status where the voltage of the VM pin is equal to or higher than the overcurrent detection voltage because the discharge current is higher than the specified value and the status lasts for the overcurrent detection delay time, the discharge control FET is turned off and discharging is stopped ...

Page 19

... FET off to stop discharging. This status is called the overdischarge status. When the discharging control FET is turned off, the VM pin voltage is pulled up by the resistor between VM and VDD in the ...

Page 20

... DL falls below the overdischarge detection voltage (V overdischarge detection voltage (V control FET off by the overcurrent detection. In this case if the recovery of the battery voltage is so slow that the battery voltage after the overdischarge detection delay time (t overdischarge detection voltage (V For products without power-down function ...

Page 21

... DP Pin The DP pin is a test pin for delay time measurement and it should be open in the actual application capacitor whose capacitance is larger than 1000 resistor whose resistance is less than 1 MΩ is connected to this pin, error may occur in the delay times or in the detection voltages. ...

Page 22

... Battery CU HC voltage pin pin pin V IOV1 CHA Charger connection Load connection Status Remark (1) Normal status, (2) Overcharge status, (3) Overdischarge status, (4) Overcurrent status The charger is supposed to charge with constant current. (2) Overcurrent Detection V CU − Battery voltage + pin pin SHORT VM pin V IOV2 ...

Page 23

... V CU −V Battery voltage + pin pin pin CHA Charger connection Load connection Status Remark (1) Normal status, (2) Overcharge status, (3) Overdischarge status, (4) Overcurrent status The charger is supposed to charge with constant current. (4) Abnormal Charge Current Detection −V V Battery voltage + pin pin pin Charger connection ...

Page 24

... If the withstanding voltage between the gate and source is lower than the charger voltage, the FET may be destroyed. * has a high resistance, the voltage between VDD and VSS may exceed the absolute maximum rating when a charger is connected in reverse since the current flows from the charger to the IC. Insert a resistor of 300 Ω or higher to R1 for ESD protection. ...

Page 25

... Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • SII claims no responsibility for any and all disputes arising out connection with any infringement by products including this IC of patents owned by a third party. LOW DROPOUT CMOS VOLTAGE REGULATOR Seiko Instruments Inc ...

Page 26

... LOW DROPOUT CMOS VOLTAGE REGULATOR S-8261 Series Characteristics (Typical Data) 1. Detection / Release Voltage Temperature Characteristics Overcharge detection voltage vs. temperature 4.44 4.42 4.40 4.38 4.36 4.34 −50 − [°C] Overdischarge detection voltage vs. temperature 3.04 3.02 3.00 2.98 2.96 2.94 −50 − [°C] Overcurrent 1 detection voltage vs ...

Page 27

... Rev.5.0 _00 2. Current Consumption Temperature Characteristics Current consumption vs. temperature in normal mode −50 − [°C] 3. Current Consumption Power Voltage Characteristics (Ta = 25°C) Current consumption power supply voltage dependency [ Detection / Release Delay Time Temperature Characteristics Overcharge detection delay time vs. temperature 1.50 1.25 1.00 ...

Page 28

... Ta [°C] Load short-circuiting delay time vs. temperature 0.40 0.36 0.32 0.28 0.24 0.20 0.16 −50 − [°C] 5. Delay Time Power-Voltage Characteristics (Ta = 25°C) Overcurrent 1 detection delay time vs. power supply voltage dependency 2 Load short-circuiting delay time vs. power supply voltage dependency 0.32 0.28 0.24 ...

Page 29

... Rev.5.0 _00 6. CO Pin / DO Pin Output Current Characteristics (Ta = 25°C) CO pin source current characteristics V DD −0.5 −0.4 −0.3 −0.2 −0 [ pin source current characteristics V DD −0.5 −0.4 −0.3 −0.2 −0 [V] DO LOW DROPOUT CMOS VOLTAGE REGULATOR = 3 pin sink current characteristics M SS ...

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... Seiko Instruments Inc. is strictly prohibited. • The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc. ...

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