NIF5003NT1G ON Semiconductor, NIF5003NT1G Datasheet
NIF5003NT1G
Specifications of NIF5003NT1G
NIF5003NT1GOS
NIF5003NT1GOSTR
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NIF5003NT1G Summary of contents
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... Current Limit Single N−Channel, SOT−223 HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain− ...
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MOSFET ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Clamped Breakdown Voltage ( Vdc 250 mAdc Vdc 250 mAdc −40°C to 150° Zero Gate Voltage Drain ...
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Current Limit Inception Region 25° 0.5 1 1 ...
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... ORDERING INFORMATION Device NIF5003NT1 NIF5003NT1G NIF5003NT3 NIF5003NT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL PERFORMANCE CURVES 25°C J 0.5 0.6 0.7 0 SOURCE−TO−DRAIN VOLTAGE (VOLTS) SD Figure 7 ...
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... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...