VN5E016AH-E STMicroelectronics, VN5E016AH-E Datasheet - Page 24

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VN5E016AH-E

Manufacturer Part Number
VN5E016AH-E
Description
IC DVR SWITCH HI SIDE SGL HPAK-6
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VN5E016AH-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
16 mOhm
Current - Peak Output
73A
Voltage - Supply
4.5 V ~ 28 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Application information
3
3.1
3.1.1
24/37
Application information
Figure 32. Application schematic
GND protection network against reverse battery
Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.
2.
where -I
maximum rating section of the device datasheet.
Power dissipation in R
Equation 1
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
GND
+5V
μC
R
R
will produce a shift (I
GND
GND
GND
≤ 600mV / (I
≥ (−V
is the DC reverse ground pin current and can be found in the absolute
C
ext
CC
R
R
R
prot
prot
) / (-I
prot
GND
S(on)max
GND
S(on)max
(when V
)
R
SENSE
CURRENT SENSE
Doc ID 15994 Rev 4
CS_DIS
IINPUT
).
P
D
= (-V
CC
* R
<0: during reverse battery situations) is:
GND
CC
) in the input thresholds and the status output
)
2
/R
V
GND
GND
GND
GND
R
GND
GND
S(on)max
only)
V
resistor.
CC
D
GND
becomes the sum of the
OUTPUT
VN5E016AH-E
D
ld

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