VN5E016AH-E STMicroelectronics, VN5E016AH-E Datasheet - Page 25

• Manufacturer Part Number: VN5E016AH-E
• Description: IC DVR SWITCH HI SIDE SGL HPAK-6
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN5E016AH-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 16 mOhm
• Current - Peak Output: 73A
• Voltage - Supply: 4.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VN5E016AH-E
3.1.2
3.2
3.3
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
Solution 2: a diode (D
A resistor (R
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
Load dump protection
D
V
that are greater than the ones shown in the ISO T/R 7637/1 table.
MCU I/Os protection
If a ground protection network is used and negative transients are present on the V
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the μC I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
I/Os.
Equation 2
Calculation example:
For V
Recommended values: R
CC
ld
is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
max DC rating. The same applies if the device is subject to transients on the V
5kΩ ≤ R
CCpeak
= -100V; I
GND
prot
=1kΩ) should be inserted in parallel to D
≤ 65kΩ.
latchup
V
CCpeak
prot
GND
≥ 20mA; V
= 10kΩ, C
Doc ID 15994 Rev 4
/I
latchup
) in the ground line
GND
≤ R
EXT
OHμC
.
prot
= 10nF
≥ 4.5V
≤ (V
OHμC
.
-V
IH
GND
-V
GND
if the device drives an
) / I
Application information
IHmax
prot
) in line to
µ
C and the
CC
CC
µ
C
line,
line
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