BUK116-50L,118 NXP Semiconductors, BUK116-50L,118 Datasheet - Page 3

• Manufacturer Part Number: BUK116-50L,118
• Description: TOPFET LOGIC LVL 50V D2PAK
• Manufacturer: NXP Semiconductors
• Series: TOPFET™r
• Type: Low Sider

Specifications of BUK116-50L,118

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 22 mOhm
• Current - Output / Channel: 50A
• Current - Peak Output: 200A
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Other names: 934044320118; BUK116-50L /T3; BUK116-50L /T3

Philips Semiconductors
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
REVERSE DIODE LIMITING VALUE
THERMAL CHARACTERISTIC
STATIC CHARACTERISTICS
T
1 The input pin must be connected to the source pin by a specified external resistance to allow the power MOSFET gate source voltage to
2 While the protection supply voltage is connected, during overvoltage clamping it is possible that the overload protection may operate at
3 Shorting the input to source with low resistance inhibits the internal overvoltage protection by preventing the power MOSFET gate source
July 1996
Logic level TOPFET
SMD version of BUK106-50L/S
SYMBOL PARAMETER
I
E
E
I
SYMBOL PARAMETER
I
SYMBOL PARAMETER
R
mb
SYMBOL PARAMETER
V
V
I
I
I
R
DRRM
DIRM
S
DSS
DSR
DSR
DSM
DRM
(CL)DSR
(CL)DSR
th j-mb
DS(ON)
= 25 ˚C unless otherwise specified
become sufficiently positive for active clamping. Refer to INPUT CHARACTERISTICS.
energies close to the limiting value. Refer to OVERLOAD PROTECTION CHARACTERISTICS.
voltage becoming positive.
Repetitive peak clamping drain current R
Non-repetitive inductive turn-off
energy
Repetitive inductive turn-off energy
Repetitive peak drain to input current
Continuous forward current
Thermal resistance
Junction to mounting base
Drain-source clamping voltage
Drain-source clamping voltage
Zero input voltage drain current V
Drain source leakage current
Drain source leakage current
Drain-source on-state
resistance
2
CONDITIONS
CONDITIONS
R
R
V
V
I
t
DM
p
-
DS
DS
DS
IS
IS
= 25 A;
3
= 100 ; I
= 100 ; I
0.01
300 s;
= 12 V; V
= 50 V; R
= 40 V; R
CONDITIONS
I
R
I
f = 250 Hz
R
CONDITIONS
T
V
DM
DM
mb
IS
IS
IS
IS
= 27 A; R
= 16 A; V
= 0 ; t
= V
= 25 ˚C;
3
100
100 ; T
IS
IS
IS
PS
D
DM
= 10 mA
= 0 V
= 100 ;
= 100 ;
0.01
= V
= 1 A; t
p
1
DD
IS
FS
mb
1 ms
= 0 V
T
100
p
20 V;
j
V
V
85 ˚C;
= 125 ˚C
IS
IS
300 s;
= 8 V
= 5 V
MIN.
MIN.
50
50
MIN.
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
0.8
0.5
BUK116-50L/S
10
22
28
1
-
-
Product specification
MAX.
MAX.
50
80
50
50
1
MAX.
MAX.
100
1.0
65
70
10
20
28
35
Rev 1.000
UNIT
UNIT
mA
mJ
UNIT
UNIT
A
A
K/W
J
m
m
V
V
A
A
A