BUK116-50L,118 NXP Semiconductors, BUK116-50L,118 Datasheet - Page 7

• Manufacturer Part Number: BUK116-50L,118
• Description: TOPFET LOGIC LVL 50V D2PAK
• Manufacturer: NXP Semiconductors
• Series: TOPFET™r
• Type: Low Sider

Specifications of BUK116-50L,118

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 22 mOhm
• Current - Output / Channel: 50A
• Current - Peak Output: 200A
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Other names: 934044320118; BUK116-50L /T3; BUK116-50L /T3

Philips Semiconductors
July 1996
Logic level TOPFET
SMD version of BUK106-50L/S
1000
I
100
D
10
% = 100 I
1
Fig.4. Normalised limiting power dissipation.
I
Fig.5. Normalised continuous drain current.
D
120
110
100
120
110
100
1
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
ID & IDM / A
& I
Fig.6. Safe operating area. T
0
0
0
0
DM
PD%
ID%
P
= f(V
D
D
% = 100 P
/I
20
20
Overload protection characteristics not shown
D
(25 ˚C) = f(T
DS
DC
); I
40
40
10
DM
D
single pulse; parameter t
60
60
/P
Tmb / C
Tmb / C
D
VDS / V
(25 ˚C) = f(T
mb
Normalised Current Derating
80
80
Normalised Power Derating
); conditions: V
100
100
100
100 ms
tp =
100 us
mb
10 ms
10 us
1 ms
120
120
= 25 ˚C
mb
)
BUK116-50L/S
140
140
IS
= 5 V
p
7
Fig.9. Typical on-state characteristics, T
200
150
100
0.001
50
40
30
20
10
Fig.8. Typical output characteristics, T
50
0.01
ID = f(V
0
0
0.1
10
1
0
1E-07
ID / A
0
ID / A
Zth / (K/W)
Fig.7. Transient thermal impedance.
D =
I
D
0.05
0.02
0.5
0.2
0.1
DS
= f(V
0
4
Z
); parameter V
th j-mb
DS
1E-05
8
); parameter V
= f(t); parameter D = t
VIS / V =
VIS / V =
12
VDS / V
VDS / V
10
1E-03
11
IS
t / s
16
1
; t
10
p
P
D
9
= 250 s & t
IS
BUK116-50L/S
; t
20
8
Product specification
t
p
7
7
p
T
= 250 s
1E-01
6
24
p
BUK116-50L/S
D =
/T
5
BUK116-50L/S
BUK116-50L/S
5
j
= 25 ˚C.
j
t
T
p
4
t
= 25 ˚C.
p
28
Rev 1.000
< t
3
1E+01
d sc
3
4
2
32
2