IPS031G International Rectifier, IPS031G Datasheet

IC MOSFET PWR SW SGL 12A 8-SOIC

IPS031G

Manufacturer Part Number
IPS031G
Description
IC MOSFET PWR SW SGL 12A 8-SOIC
Manufacturer
International Rectifier
Type
Low Sider
Datasheet

Specifications of IPS031G

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
45 mOhm
Current - Output / Channel
2.2A
Current - Peak Output
15A
Voltage - Supply
4 V ~ 6 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Switch Type
Low Side
Power Switch Family
IPS031G
Input Voltage
4 to 6V
Power Switch On Resistance
45mOhm
Output Current
1.4A
Mounting
Surface Mount
Supply Current
10mA
Package Type
SOIC
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Pin Count
8
Power Dissipation
1W
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IPS031G

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPS031G
Manufacturer:
IR
Quantity:
20 000
Features
www.irf.com
Description
The IPS031G/IPS032G are fully protected single/dual
low side SMART POWER MOSFETs that feature over-
current, over-temperature, ESD protection and drain
to source active clamp.These devices combine a
HEXFET ® POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning
off the power MOSFET when the temperature ex-
ceeds 165
The device restarts once the input is cycled. The
avalanche capability is significantly enhanced by the
active clamp and covers most inductive load demag-
netizations.
Typical Connection
(Refer to lead assignment for correct pin assignment)
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH
o
C or when the drain current reaches 12A.
Q
Logic signal
R in series
(if needed)
IN
Product Summary
control
Packages
R
V
Ishutdown
T
on
8-Lead SOIC
ds(on)
clamp
IPS031G
IPS031G/IPS032G
/ T
S
off
Load
Data Sheet No.PD 60151-J
D
S
70m
16-Lead SOIC
1.5 s
12A
50V
IPS032G
(Dual)
(max)
1

Related parts for IPS031G

IPS031G Summary of contents

Page 1

... Active clamp Low current & logic level input E.S.D protection Description The IPS031G/IPS032G are fully protected single/dual low side SMART POWER MOSFETs that feature over- current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET ® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments ...

Page 2

... C/W) IPS031G (for all sd mosfets, rth= Diode max. pulsed current pulsed P d Maximum power dissipation o (rth=125 C/W) IPS031G (for all Pd mosfets, rth=85 ESD1 Electrostatic discharge voltage ESD2 Electrostatic discharge voltage T stor. Max. storage temperature T j max. Max. junction temperature Thermal Chacteristics ...

Page 3

... 14V, Resistive Load = 5 (IPS031), Resistive Load = 3 (IPS031S), Rinput = 50 otherwise specified). Symbol Parameter T on Turn-on delay time T r Rise time T rf Time to 130% final R ds(on) T off Turn-off delay time T f Fall time Q in Total gate charge www.irf.com 5V, rth = 100 C/ 125 C) IPS031G 5V, rth = 85 C/ 125 C) IPS032G Min. Typ — 0 ...

Page 4

... T reset Time to reset protection EOI_OT Short circuit energy (see application note) Functional Block Diagram All values are typical IN 8 Lead Assignments Lead SOIC IPS031G 4 Min. Typ. — 165 10 14 1.5 2 400 — 300 200 > 165°c I > 1sd Part Number Max ...

Page 5

... Appl . Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms www.irf.com 90 % Vin 10 % Tr-in Tr-in t > T reset t < T reset 90 % Ids Vds Figure rise time & switching time definitions T clamp Rem : V load is negative Figure 4 - Active clamp test circuit IPS031G/IPS032G Td off load + during demagnetization Vin IN Vds Ids tf ...

Page 6

... IPS031G/IPS032G All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 100 Figure 5 - Rds Input Voltage ( ton delay 6 rise tim e 5 130% final rdson Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs Input Voltage ...

Page 7

... Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on Resistor ( ) Figure 11 - Current Iimimitation & I shutdown (A) Vs Vin (V) www.irf.com 10000 Figure 10 - Turn-OFF Delay Time & Fall Time (us Isd 25° Ilim 25°C 0 -50 - Figure shutdown (A) Vs Temperature ( o C) IPS031G/IPS032G delay off fall tim Resistor ( ) 100 125 150 7 ...

Page 8

... IPS031G/IPS032G 10 rth = 50°C/W SO8 Std. footprint 100°C - 100 Figure 13a - Max.Cont. Ids ( Amb. Temperature ( C) - IPS031G 100 T = 25° 100 ° Figure 14 - Ids (A) Vs Protection Resp. Time (s) IPS031G/IPS032G -50 0 150 200 Figure 13b - Max.Cont. Ids (A) Vs Amb. Temperature ( 100 10 1 Vbat = 14 V Tjini = ...

Page 9

... SO8 std footprint Figure 16a - Transient Thermal Imped Time (s) - IPS031G 200 180 160 140 120 100 80 60 Iin, Iin,off 0 -50 - 100 125 150 Figure 17 - Input current ( www.irf.com Single pulse C/W) Figure 16b - Transient Thermal Imped Time (s) - IPS032G 120% 115% 110% ...

Page 10

... IPS031G/IPS032G -50 - Figure 19 - Turn-on, Turn-off, and Treset KI Case Outlines 0.25 [.010 0.25 [.010 NOT ES: 1. DIMENS IONING & T OLERANCING PE R ASME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIME TE RS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUTLINE MS-012AA. ...

Page 11

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 16 -Lead SOIC (narrow body) Data and specifications subject to change without notice. IPS031G/IPS032G 01-6018 01-3064 00 (MS-012AC) 6/11/2001 11 ...

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