TEA1713T/N1,518 NXP Semiconductors, TEA1713T/N1,518 Datasheet

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TEA1713T Resonant power supply control IC with PFC Rev. 2 — 9 February 2011 1. General description The TEA1713 integrates a Power Factor Corrector (PFC) controller and a controller for a Half-Bridge resonant Converter (HBC multi-chip IC. It ...

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... NXP Semiconductors 2. Features and benefits 2.1 General features Integrated PFC and HBC controllers Universal mains supply operation ( 276 V (AC)) High level of integration resulting in a low external component count and a cost effective design Enable input (enable only PFC or both PFC and HBC controllers) ...

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... NXP Semiconductors 4. Ordering information Table 1. Ordering information Type number Package Name TEA1713T SO24 5. Block diagram SNSBOOST 2 SNSMAINS +1.15 V MAINS RESET, UNDERVOLTAGE SENSING AND CLAMP MAINS COMPENSATION ON-TIMER OFF-TIME LIMIT FREQUENCY LIMIT Error amplifier and clamp 1 +2.5 V COMPPFC PFC driver SUPREG 7 PFC ...

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... NXP Semiconductors 6. Pinning information 6.1 Pinning Fig 2. Pin configuration 6.2 Pin description Table 2. Symbol COMPPFC SNSMAINS SNSAUXPFC SNSCURPFC 4 SNSOUT SUPIC GATEPFC PGND SUPREG GATELS n.c. SUPHV GATEHS SUPHS TEA1713T Product data sheet COMPPFC 1 SNSMAINS 2 3 SNSAUXPFC 4 SNSCURPFC SNSOUT 5 SUPIC 6 TEA1713T GATEPFC ...

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... NXP Semiconductors Table 2. Symbol HB n.c. SNSCURHBC 17 SGND CFMIN RFMAX SNSFB SSHBC/EN RCPROT SNSBOOST 7. Functional description 7.1 Overview of IC modules The functionality of the TEA1713 can be grouped as follows: • Supply module: Supply management for the IC; includes the restart and (latched) shut-down states • ...

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... NXP Semiconductors 7.2 Power supply The TEA1713 contains several supply related pins. 7.2.1 Low-voltage supply input (pin SUPIC) The SUPIC pin is the main low-voltage supply input to the IC. All internal circuits (other than the high voltage circuit) are directly or indirectly (via SUPREG) supplied from this pin. ...

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... NXP Semiconductors • Boost charge state The PFC controller is switching; the HBC controller is off. The current from the high voltage start-up source is large enough to supply SUPIC (current consumption < I ch(nom)(SUPIC) • Operational supply state Both the PFC and HBC controllers are switching. Current consumption is I When the HBC controller is enabled, the switching frequency will be high initially and the current consumption of the HBC MOSFET drivers will be dominant ...

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... NXP Semiconductors external diode D minimized by carefully selecting the appropriate diode, especially when using large MOSFETs and high switching frequencies. 7.2.4 High voltage supply input (pin SUPHV stand-alone power supply application, this pin is connected to the boost voltage. C SUPIC current from SUPHV to SUPIC) via this pin. ...

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... NXP Semiconductors UVP supplies = yes enable PFC = no Explanation flow diagram symbols STATE NAME -action 1 -action 2 -... Disabled items are not mentioned exit condition 1 exit condition 2 reached reached exit condition next state can be entered from any state when exit condition is true -HV start-up source on ...

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... NXP Semiconductors Table 3. Operating states …continued State Description Boost charge Boost voltage is built up by operational PFC. Operational supply Output voltage is generated. Both PFC and HBC controllers are fully operational. Restart Activated when a protection function is triggered. Restart timer is activated. During this time, ...

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... NXP Semiconductors Enable supply signal (0 to > Disable supply Fig 4. 7.5 IC protection 7.5.1 IC restart and shut-down In addition to the protection functions that influence the operation of the PFC and HBC controllers, a number of protection functions are provided that disable both controllers. See the protection overview protection shut-down. • ...

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... NXP Semiconductors 7.5.2 Protection and restart timer The TEA1713 contains a programmable timer which can be used for timing several protection functions. The timer can be used in two ways - as a protection timer and as a restart timer. The timing of the timers can be set independently via an external resistor ...

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... NXP Semiconductors Fig 6. Figure 6 When a restart is requested u(RCPROT The restart time has elapsed when V prot V l(RCPROT) 7.5.3 Fast shut-down reset (pin SNSMAINS) The latched Protection shut-down state will be reset when V their respective reset levels will need to discharge before V boost which can take a long time. ...

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... NXP Semiconductors In applications where the TEA1713 is supplied from a separate DC source (e.g. a standby supply), the TEA1713 will not automatically stop switching if an error condition causes the output voltage to fall. For this reason, the TEA1713 outputs are provided with undervoltage protection (UVP output; see ...

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... NXP Semiconductors The PFC controller uses valley switching to minimize losses. A primary stroke is only started once the previous secondary stroke has ended and the voltage across the PFC MOSFET has reached a minimum value. 7.7.1 PFC gate driver (pin GATEPFC) The circuit driving the gate of the power MOSFET has a high current sourcing capability ...

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... NXP Semiconductors Fig 7. 7.7.3 PFC demagnetization sensing (pin SNSAUXPFC) The voltage on the SNSAUXPFC pin is used to detect transformer demagnetization. During the secondary stroke, the transformer is magnetized and current flows in the boost output. During this time, V MOSFET is kept off. After some time, the transformer becomes demagnetized and current stops flowing in the boost output ...

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... NXP Semiconductors Fig 8. Valleys are detected by the valley sensing block connected to the SNSAUXPFC pin. This block measures the voltage at the auxiliary winding of the PFC transformer, which is a reduced and inverted copy of the MOSFET drain voltage. When a valley of the drain voltage (= top at SNSAUXPFC voltage) is detected, the MOSFET is switched on. ...

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... NXP Semiconductors This is achieved by connecting a resistor R pin SNSCURPFC and the current sense resistor R source I voltage is limited to the maximum PFC soft start clamp voltage, V additional voltage across the charged capacitor results in a reduced peak current. After start-up, the internal current source is switched-off, capacitor C ...

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... NXP Semiconductors Switching of the power factor correction circuit is inhibited as soon as the voltage on the SNSBOOST pin rises above V V SNSBOOST Overvoltage protection will also be triggered in the event of an open circuit at the resistor connected between SNSBOOST and ground. 7.7.10 PFC short circuit/open-loop protection, SCP/OLP-PFC (pin SNSBOOST) ...

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... NXP Semiconductors • Several protection circuits and the state of the SSHBC/EN input determine whether the resonant converter is allowed to start switching. Figure 9 GATEHS GATELS V I Tr(HBC) CFMIN Fig 9. 7.8.4 HBC Adaptive Non-Overlap (ANO) time function (pin HB) 7.8.4.1 Inductive mode (normal operation) The high efficiency characteristic of a resonant converter is the result of Zero-Voltage Switching (ZVS) of the power MOSFETs, also called soft switching ...

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... NXP Semiconductors on. In this way the non-overlap time is optimized automatically, minimizing switching losses, even if the HB transition cannot be fully completed. operation of the adaptive non-overlap time function in Inductive mode. GATEHS GATELS V Fig 10. Adaptive non-overlap time function (normal inductive operation) The non-overlap time depends on the HB slope, but has upper and lower limits. ...

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... NXP Semiconductors GATEHS GATELS Tr(HBC) CFMIN Fig 11. Adaptive non-overlap time function (capacitive operation) The MOSFET will be forced to switch on if the half-bridge slope fails to start and the oscillator voltage reaches V The switching frequency is increased to eliminate the problems associated with Capacitive mode operation. This is explained in 7 ...

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... NXP Semiconductors Fig 12. Determination of frequency Two external components determine the frequency range: • Capacitor C frequency in combination with an internally trimmed current source I • Resistor R and thus the maximum frequency. The oscillator frequency depends on the charge and discharge currents of C (dis-)charge current contains a fixed component, I frequency, and a variable component that is 4 ...

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... NXP Semiconductors Fig 13. Function of R The oscillator is controlled by the slope of the half-bridge. The oscillator charge current is initially set to a low value I detected, the charge current is increased to its normal value. This feature is used in combination with the adaptive non-overlap time function as described in and ...

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... NXP Semiconductors Fig 14. Transfer function of feedback input Below the level for minimum frequency, V This clamp enables a fast recovery of the output voltage regulation loop after an overshoot of the output voltage. The maximum current the clamp can deliver is I clamp(SNSFB) 7.8.7 HBC open-loop protection, OLP-HBC (pin SNSFB) ...

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... NXP Semiconductors Fig 15. Relation between SSHBC/EN voltage and frequency V RFMAX V fmax(SSHBC) C ss(HBC) soft start function is zero when V V SSHBC/EN minimum) and at a minimum (≈ 3 V). Below V discharge current is reduced to a maximum-frequency soft start current of typically 5 μA The voltage is clamped at a minimum of V ...

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... NXP Semiconductors The slow (dis-)charge speed is used for the lower frequency range where V above V converter react strongly to frequency variations. Section 7.8.10.2 regulation. The soft start capacitor is neither charged nor discharged during non-operation time in Burst mode. The soft start voltage will not change during this time. ...

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... NXP Semiconductors 7.8.9 HBC high-frequency protection, HFP-HBC (pin RFMAX) Normally the converter will not operate continuously at maximum frequency because it will sweep down to much lower values. Certain error conditions, such as a disconnected transformer, could cause the converter to operate continuously at maximum frequency. If zero-voltage switching conditions are no longer present, the MOSFETs can overheat. The TEA1713 features High-Frequency Protection (HFP) for the HBC controller to protect it from being damaged in such circumstances ...

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... NXP Semiconductors V reg V Boost V uvp GATEHS GATELS sink sink current only with positive SNSCURHBC source I ocp(high) I ocr(high) I ocp(nom) I ocr(nom) I Cur(HBC) 0 −I ocp(nom) −I ocr(high) −I ocp(high) V ocp(HBC) V ocr(HBC) V SNSCURHBC 0 −V ocr(HBC) −V ocp(HBC) nominal V no compensation nominal OCR Fig 17. Boost voltage compensation 7 ...

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... NXP Semiconductors I ocr I Cur(HBC) 0 −I ocr I ss(hf)(SSHBC ss(If)(SSHBC) SSHBC/EN −I ss(If)(SSHBC) −I ss(hf)(SSHBC) V fmin(SSHBC) V SSHBC/EN V ss(hf-lf)(SSHBC) V fmax(SSHBC reg V Output 0 Fast soft-start sweep (charge and discharge) Fig 18. Overcurrent regulation during start-up The protection timer is also started. The Restart state is activated when the OCR-HBC condition is still present after the protection time has elapsed ...

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... NXP Semiconductors Capacitive mode is detected when the HB slope does not start within t MOSFETs have switched off. Detection of Capacitive mode will increase the switching frequency. This is realized by discharging the soft start capacitor with a relatively high current I started. The frequency increase regulates the HBC to the border between capacitive and inductive mode ...

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... NXP Semiconductors 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).; All voltages are measured with respect to pin SGND; Currents are positive when flowing into the IC; The voltage ratings are valid provided other ratings are not violated; Current ratings are valid provided the maximum power rating is not violated ...

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... NXP Semiconductors Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).; All voltages are measured with respect to pin SGND; Currents are positive when flowing into the IC; The voltage ratings are valid provided other ratings are not violated; Current ratings are valid provided the maximum power rating is not violated ...

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... NXP Semiconductors Table 7. Characteristics …continued ° amb SUPIC SUPHV flowing into the IC; unless otherwise specified. Symbol Parameter V undervoltage protection voltage on uvp(SUPIC) pin SUPIC V reset voltage on pin SUPIC rst(SUPIC) V short-circuit protection voltage on scp(SUPIC) pin SUPIC I reduced charge current on pin ch(red)(SUPIC) SUPIC ...

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... NXP Semiconductors Table 7. Characteristics …continued ° amb SUPIC SUPHV flowing into the IC; unless otherwise specified. Symbol Parameter Output voltage protection sensing, UVP/OVP output (pin SNSOUT) V overvoltage protection voltage on ovp(SNSOUT) pin SNSOUT V under-voltage protection voltage on uvp(SNSOUT) pin SNSOUT Overtemperature protection T overtemperature protection trip ...

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... NXP Semiconductors Table 7. Characteristics …continued ° amb SUPIC SUPHV flowing into the IC; unless otherwise specified. Symbol Parameter PFC demagnetization sensing (pin SNSAUXPFC) V demagnetization voltage on pin demag(SNSAUXPFC) SNSAUXPFC t magnetization time-out time to(mag) I protection current on pin prot(SNSAUXPFC) SNSAUXPFC PFC valley sensing (pin SNSAUXPFC) ...

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... NXP Semiconductors Table 7. Characteristics …continued ° amb SUPIC SUPHV flowing into the IC; unless otherwise specified. Symbol Parameter I protection current on pin prot(SNSBOOST) SNSBOOST HBC high-side and low-side driver (pin GATEHS and GATELS) I source current on pin GATEHS source(GATEHS) I source current on pin GATELS source(GATELS) ...

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... NXP Semiconductors Table 7. Characteristics …continued ° amb SUPIC SUPHV flowing into the IC; unless otherwise specified. Symbol Parameter V minimum frequency voltage on pin fmin(SNSFB) SNSFB I minimum frequency current on pin fmin(SNSFB) SNSFB V maximum frequency voltage on pin fmax(SNSFB) SNSFB I maximum frequency current on pin fmax(SNSFB) SNSFB ...

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... NXP Semiconductors Table 7. Characteristics …continued ° amb SUPIC SUPHV flowing into the IC; unless otherwise specified. Symbol Parameter V HBC overcurrent protection voltage ocp(HBC) I maximum boost compensation bstc(SNSCURHBC)max current on pin SNSCURHBC HBC Capacitive Mode Protection (CMP) (pin HB) t time-out capacitive mode regulation to(cmr) [1] The marked levels on this pin are correlated ...

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... NXP Semiconductors 11. Application information Rect Tr (PFC) Aux(PFC) Mains C rect Dr(PFC) R ss(PFC) Cur(PFC) C ss(PFC) R cur(PFC) Fig 19. Application diagram of TEA1713 TEA1713T Product data sheet Boost D SUPHS C boost C SUPREG SUPHV SUPIC SUPREG SNSBOOST SNSAUXPFC SNSMAINS GATEPFC Resonant Power Factor Half-Bridge Controller SNSCURPFC Controller COMPPFC ...

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... NXP Semiconductors 12. Package outline SO24: plastic small outline package; 24 leads; body width 7 pin 1 index 1 e DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.3 2.45 2.65 mm 0.25 0.1 2.25 0.012 0.096 0.1 inches 0.01 0.004 0.089 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...

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... NXP Semiconductors 13. Abbreviations Table 8. Acronym ANO CMOS CMR DMOS EMI HBC HFP HV OCP OCR OLP OTP OVP PFC UVP SCP TEA1713T Product data sheet Abbreviations Description Adaptive Non-Overlap Complementary Metal-Oxide-Semiconductor' Capacitive Mode Regulation Double-diffused Metal-Oxide-Semiconductor ElectroMagnetic Interference Half-Bridge Converter or Controller. Resonant converter which generates the regulated output voltage ...

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... NXP Semiconductors 14. Revision history Table 9. Revision history Document ID Release date TEA1713T v.2 20110209 TEA1713T v.1 20091222 TEA1713T Product data sheet Resonant power supply control IC with PFC Data sheet status Product data sheet Product data sheet All information provided in this document is subject to legal disclaimers. ...

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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

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... Product data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

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... NXP Semiconductors 17. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 2 2.1 General features . . . . . . . . . . . . . . . . . . . . . . . . 2 2.2 PFC controller features 2.3 HBC controller features . . . . . . . . . . . . . . . . . . 2 2.4 Protection features . . . . . . . . . . . . . . . . . . . . . . 2 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 5 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Functional description . . . . . . . . . . . . . . . . . . . 5 7 ...

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... NXP Semiconductors 15 Legal information 15.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 44 15.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 15.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 15.4 Trademarks Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Resonant power supply control IC with PFC Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. ...