SI1869DH-T1-E3 Vishay, SI1869DH-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1869DH-T1-E3
• Description: IC LOAD SW LVL SHIFT 20V SC70-6
• Manufacturer: Vishay
• Type: High Side Switchr

Specifications of SI1869DH-T1-E3

• Transistor Polarity: N and P-Channel
• Number Of Outputs: 1
• Rds (on): 165 mOhm
• Internal Switch(s): Yes
• Current Limit: 1.2A
• Voltage - Input: 1.8 ~ 20 V
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 1.2 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Module Configuration: Dual
• Continuous Drain Current Id: 700mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 303mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1869DH-T1-E3TR

Si1869DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
250
200
150
100
1.6
1.4
1.2
1.0
0.8
0.6
50
40
35
30
25
20
15
10
0
5
0
- 50
0
0
I
V
I
V
C
C
L
t
L
I
V
C
C
d(off)
ON/OFF
ON/OFF
L
i
o
= 0.7 A
- 25
ON/OFF
= 1 A
i
o
= 10 µF
= 1 A
= 1 µF
= 10 µF
= 1 µF
t
r
20
R2 at V
2
R2 at V
= 1.5 V to 8 V
= 3 V
= 3 V
0
Normalized On-Resistance
T
vs. Junction Temperature
J
- Junction Temperature (°C)
Switching Variation
Switching Variation
IN
25
IN
40
4
= 4.5 V, R1 = 300 kΩ
= 2.5 V, R1 = 20 kΩ
R2 (kΩ)
R2 (kΩ)
50
60
6
75
V
IN
= 4.5 V
100
V
80
8
IN
t
d(on)
t
t
t
t
t
125
= 1.8 V
f
d(off)
f
r
d(on)
100
150
10
100
200
150
100
16
12
20
80
60
40
20
50
8
4
0
0
0
0
0
0
I
V
C
C
I
V
C
C
L
t
L
ON/OFF
t
i
o
d(off)
I
V
C
C
t
ON/OFF
d(off)
i
o
= 1 A
L
d(on)
= 1 A
= 10 µF
= 10 µF
ON/OFF
= 1 µF
i
o
= 1 µF
= 1 A
t
= 10 µF
r
t
= 1 µF
t
f
r
20
2
2
R2 at V
R2 at V
R2 at V
= 3 V
= 3 V
= 3 V
t
Switching Variation
Switching Variation
Switching Variation
t
d(on)
r
t
IN
f
IN
IN
40
4
4
= 2.5 V, R1 = 300 kΩ
= 4.5 V, R1 = 20 kΩ
= 1.8 V, R1 = 20 kΩ
R2 (kΩ)
R2 (kΩ)
R2 (kΩ)
S10-0792-Rev. C, 05-Apr-10
Document Number: 73449
60
6
6
t
d(off)
80
8
8
t
d(on)
t
f
100
10
10