CNY17-2 Vishay, CNY17-2 Datasheet - Page 2

• Manufacturer Part Number: CNY17-2
• Description: OPTOCOUPLER PHOTOTRANS 125% 6DIP
• Manufacturer: Vishay

Specifications of CNY17-2

• Mounting Type: Through Hole
• Isolation Voltage: 5300 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 22% @ 1mA
• Current Transfer Ratio (max): 125% @ 10mA
• Voltage - Output: 70V
• Current - Output / Channel: 100mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor with Base
• Package / Case: 6-DIP (0.300", 7.62mm)
• Forward Current: 10 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor With Base
• Configuration: 1
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 125 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 60mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1266-5; CNY17-2GI; CNY17-2GI

CNY17
Vishay Semiconductors
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
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2
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Isolation thickness between
emitter and detector
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature
Operating temperature
Soldering temperature
ELECTRICAL CHARACTERISTCS (T
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
COUPLER
Collector emitter, saturation voltage
Coupling capacitance
Collector emitter, leakage current
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
evaluations. Typical values are for information only and are not part of the testing requirements.
For technical questions, contact:
V
Optocoupler, Phototransistor Output,
F
V
V
V
V
TEST CONDITION
= 10 mA, I
CE
CB
EB
R
= 0 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
I
I
V
R
F
V
CE
= 60 mA
= 10 mA
amb
R
max. 10 s, dip soldering: distance to
amb
= 6 V
= 10 V
with Base Connection
C
= 25 °C, unless otherwise specified)
V
= 25 °C, unless otherwise specified)
V
= 2.5 mA
IO
seating plane ≥ 1.5 mm
IO
= 500 V, T
TEST CONDITION
= 500 V, T
t < 1 ms
t = 1 s
CNY17-1
CNY17-2
CNY17-3
CNY17-4
amb
[e-mail]
amb
PART
= 100 °C
= 25 °C
SYMBOL
V
C
I
I
I
I
V
C
C
R
R
CEsat
C
C
CEO
CEO
CEO
CEO
V
I
BR
CB
R
CE
EB
O
th
th
F
C
SYMBOL
BV
BV
P
T
MIN.
V
T
T
R
R
amb
I
I
diss
ISO
stg
sld
CEO
EBO
C
C
6
IO
IO
TYP.
1.25
0.01
0.25
750
500
- 55 to + 150
- 55 to + 100
5.2
6.5
7.5
0.6
25
2
2
5
5
VALUE
≥ 10
≥ 10
5300
≥ 0.4
100
150
175
260
≥ 7
≥ 7
70
50
7
Document Number: 83606
12
11
MAX.
1.65
100
100
0.4
Rev. 1.7, 04-Nov-10
10
50
50
UNIT
V
mW
mm
mm
mm
mA
mA
RMS
°C
°C
°C
Ω
Ω
V
V
UNIT
K/W
K/W
μA
nA
nA
nA
nA
pF
pF
pF
pF
pF
V
V
V