ILD207T Vishay, ILD207T Datasheet - Page 4

• Manufacturer Part Number: ILD207T
• Description: OPTOCOUPLER PHOTO DL 200% 8SOIC
• Manufacturer: Vishay

Specifications of ILD207T

• Mounting Type: Surface Mount
• Isolation Voltage: 4000 Vrms
• Number Of Channels: 2
• Input Type: DC
• Voltage - Isolation: 4000Vrms
• Current Transfer Ratio (min): 34% @ 1mA
• Current Transfer Ratio (max): 200% @ 10mA
• Voltage - Output: 70V
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Package / Case: 8-SOIC (3.9mm Width)
• Forward Current: 30 mA
• Maximum Input Diode Current: 30 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 2
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 200 %
• Maximum Forward Diode Voltage: 1.55 V
• Maximum Power Dissipation: 300 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 2
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 70V
• Opto Case Style: SOIC
• No. Of Pins: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Current - Dc Forward (if): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 751-1310-2; ILD207TGITR; ILD207TGITR

ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T
Vishay Semiconductors
Note
• As per IEC 60747-5-2, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
(according to IEC 68 part 1)
Comparative tracking index
V
V
P
I
T
Creepage distance
Clearance distance
Insulation thickness
SI
the safety ratings shall be ensured by means of protective circuits.
IOTM
IORM
SI
SO
Fig. 5 - Collector Current vs. Collector Emitter Voltage (NS)
22327
Fig. 4 - Forward Voltage vs. Forward Current
1.6
1.5
1.4
1.3
1.2
1.0
0.9
0.8
0.7
1.1
25
20
15
10
5
0
0.1
0
V
CE
T
- Collector Emitter Voltage (NS) (V)
amb
T
I
2
F
amb
= 100 °C
I
- Forward Current (mA)
F
= - 55 °C
= 30 mA
1
I
F
T
4
= 20 mA
amb
= 75 °C
I
T
F
amb
= 15 mA
T
For technical questions, contact:
I
amb
F
6
= 10 mA
= 50 °C
= 0 °C
10
T
Optocoupler, Phototransistor Output,
amb
I
TEST CONDITION
F
amb
= 5 mA
= 25 °C
8
Dual Channel, SOIC-8 Package
= 25 °C, unless otherwise specified)
100
10
SYMBOL
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CTI
Fig. 7 - Collector Current vs. Collector Emitter Voltage (sat)
Fig. 6 - Leakage Current vs. Ambient Temperature
22329
0.001
1000
MIN.
6000
175
560
0.2
0.1
10
30
25
20
15
10
4
4
5
0
- 60 - 40 - 20
0
V
CE
T
I
F
amb
- Collector Emitter Voltage (sat) (V)
= 0 mA
55/100/21
- Ambient Temperature (°C)
0.1
V
TYP.
CE
= 40 V
0
I
F
0.2
I
20
F
= 25 mA
= 1 mA
40
I
F
V
Document Number: 83647
= 10 mA
CE
MAX.
399
350
150
165
= 24 V
I
0.3
V
F
60
CE
= 5 mA
I
Rev. 1.8, 04-Mar-11
F
= 12 V
= 2 mA
80 100
0.4
UNIT
mW
mm
mm
mm
mA
°C
V
V