H11G2 Fairchild Optoelectronics Group, H11G2 Datasheet - Page 2
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H11G2
Manufacturer Part Number
H11G2
Description
OPTOCOUPL DARL-OUT HV 6-DIP
Manufacturer
Fairchild Optoelectronics Group
Datasheet
1.H11G1.pdf
(6 pages)
Specifications of H11G2
Number Of Channels
1
Input Type
DC
Voltage - Isolation
5300Vrms
Current Transfer Ratio (min)
500% @ 1mA
Voltage - Output
80V
Current - Dc Forward (if)
60mA
Vce Saturation (max)
1V
Output Type
Darlington with Base
Mounting Type
Through Hole
Package / Case
6-DIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Current Transfer Ratio (max)
-
Other names
H11G2GI
H11G2QT
H11G2QT
H11G2QT
H11G2QT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
H11G2
Manufacturer:
FAIRCHIL
Quantity:
883
Part Number:
H11G2
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
H11G2SD
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
H11G2SR2M
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
** All typical values at T
EMITTER
DETECTOR
EMITTER
SWITCHING TIMES
ELECTRICAL CHARACTERISTICS
INDIVIDUAL COMPONENT CHARACTERISTICS
TRANSFER CHARACTERISTICS
TRANSFER CHARACTERISTICS
Characteristic
Forward Voltage
Forward Voltage Temp.
Coefficient
Reverse Breakdown Voltage
Junction Capacitance
Reverse Leakage Current
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Base
Leakage Current
Collector to Emitter
DC Characteristic
Current Transfer Ratio
Collector to Emitter
Saturation Voltage
Characteristic
Turn-on Time
Turn-off Time
(V
CE
A
= 5 V) Pulse Width
= 25°C
(V
(V
CE
CE
= 80 V, I
= 60 V, I
(R
(I
(I
(I
F
F
L
(I
F
(I
= 16 mA, I
= 20 mA, I
(V
(V
F
= 100
F
= 10 mA, V
(I
(V
(V
(V
= 1 mA, V
= 1 mA, I
F
F
C
300 µs, f
CE
CE
CE
F
F
= 0 V, f = 1 MHz)
= 1 V, f = 1 MHz)
Test Conditions
= 1.0 mA, I
Test Conditions
Test Conditions
PHOTODARLINGTON OPTOCOUPLERS
= 0, T
= 0, T
= 80 V, I
= 60 V, I
= 30 V, I
(T
(I
, I
(I
(V
(I
C
A
C
C
F
F
R
R
= 100 µA)
C
= 25 °C Unless otherwise specified.)
A
A
= 10 mA)
CE
CE
= 50 mA)
= 50 mA)
= 10 mA)
= 10 µA)
= 3.0 V)
= 1 mA)
= 80°C)
= 80°C)
30 Hz)
= 1 V)
= 5 V)
F
F
F
F
= 0)
= 0)
= 0)
= 0)
V
Symbol
Symbol
Symbol
BV
BV
BV
CE (SAT)
I
CTR
BV
CEO
V
C
t
t
I
V
on
off
T
CEO
CBO
R
EBO
F
J
F
A
R
H11G1/2 100 (1000)
H11G1/2
H11G1/2
H11G1/2
Device
Device
Device
H11G1
H11G2
H11G3
H11G1
H11G2
H11G3
H11G1
H11G2
H11G3
H11G1
H11G2
H11G3
H11G3
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
5 (500)
2 (200)
Min
Min
Min
100
100
3.0
80
55
80
55
7
H11G1, H11G2, H11G3
HIGH VOLTAGE
Typ**
0.001
Typ**
Typ**
0.85
0.75
0.85
-1.8
100
1.3
25
50
65
10
5
7/21/00
Max
1.50
Max
Max
100
100
1.0
1.0
1.2
10
200045A
mA (%)
mV/°C
Unit
Unit
Unit
pF
pF
µA
nA
µA
µs
V
V
V
V