TLP3042(TP1,SC,F,T Toshiba, TLP3042(TP1,SC,F,T Datasheet - Page 2
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TLP3042(TP1,SC,F,T
Manufacturer Part Number
TLP3042(TP1,SC,F,T
Description
PHOTOTRIAC 10MA 400V 6DIP SMD
Manufacturer
Toshiba
Datasheet
1.TLP3042TP1SCFT.pdf
(6 pages)
Specifications of TLP3042(TP1,SC,F,T
Voltage - Isolation
5000Vrms
Number Of Channels
1
Voltage - Off State
400V
Output Type
AC, Triac, Zero Cross
Current - Gate Trigger (igt) (max)
10mA
Current - Hold (ih)
600µA
Current - Dc Forward (if)
20mA
Current - Output / Channel
100mA
Mounting Type
Surface Mount
Package / Case
6-SMD (300 mil, 5 Leads)
Number Of Elements
1
Output Device
Triac
Forward Voltage
1.3V
Repetitive Peak Off-state Volt
400V
Operating Temp Range
-25C to 85C
Output Current
100mA
Isolation Voltage
5000Vrms
Package Type
PDIP
Reverse Breakdown Voltage
5V
Mounting
Through Hole
Pin Count
5
Trigger Current
5mA
Zero Crossing Circuit
Yes
Operating Temperature Classification
Commercial
Forward Current
50mA
Power Dissipation
330mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP3042(TP1SCFT
Absolute Maximum Ratings
Recommended Operating Conditions
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature (10s)
Total Package Power Dissipation
Total Package Power Dissipation
Derating (Ta ≥ 25°C)
Isolation Voltage
(AC, 1 min., R.H. ≤ 60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Note 1: Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4 and 6 shorted
Supply Voltage
Forward Current
Peak On-Stage Current
Operating Temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
* :
Forward Current
Forward Current Derating
(Ta ≥ 53°C)
Peak Forward Current
(100
Power Dissipation
Power Dissipation Derating
(Ta ≥ 25°C)
Reverse Voltage
Junction Temperature
Off-State Output Terminal Voltage
On-Stage RMS
Current
On-State Current Derating
(Ta ≥ 25°C)
Peak On-Stage Current
(100
Peak Nonrepetitive Surge
Current (P
Power Dissipation
Power Dissipation Derating
(Ta ≥ 25°C)
Junction Temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
In the case of TLP3042
together.
μ
μ
CHARACTERISTIC
CHARACTERISTIC
s pulse, 100pps)
s pulse, 120pps)
W
= 10ms)
Ta = 25°C
Ta = 70°C
(Note 1)
(Ta = 25°C)
SYMBOL
SYMBOL
ΔP
ΔP
ΔP
ΔI
I
ΔI
T(RMS)
V
V
T
I
BV
T
T
I
T
I
F
T
TSM
I
I
P
D
V
DRM
P
D
P
TP
T
F
opr
AC
I
FP
T
TP
T
opr
stg
sol
F
D
R
D
*
/ °C
/ °C
T
j
j
/ °C
/ °C
/ °C
S
MIN
−25
⎯
15
⎯
−55 to 150
−40 to 100
2
RATING
5000
TLP3041(S),TLP3042(S),TLP3043(S)
−0.7
−1.0
−1.1
−4.0
−4.4
100
125
400
100
300
115
260
330
1.2
50
50
1
5
2
TYP.
20
⎯
⎯
⎯
mW / °C
mW / °C
mW / °C
MAX
mA / °C
mA / °C
120
25
85
UNIT
Vrms
1
mW
mW
mW
mA
mA
°C
°C
°C
°C
°C
A
V
V
A
A
UNIT
Vac
mA
°C
A
2010-10-01