MT18VDDF12872G-40BD3 Micron Technology Inc, MT18VDDF12872G-40BD3 Datasheet - Page 28

• Manufacturer Part Number: MT18VDDF12872G-40BD3
• Description: MODULE DDR SDRAM 1GB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF12872G-40BD3

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 200MHz
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1114

Table 21: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes at end of Serial Presence-Detect Matrix
pdf: 09005aef80f6b913, source: 09005aef80f6b41c
DDAF18C64_128x72G.fm - Rev. C 9/04 EN
BYTE
36-40 Reserved
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
41
42
43
44
0
1
2
3
4
5
6
7
8
9
Number of SPD Bytes Used by Micron
Total Number of Bytes In SPD Device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on Assembly
Number of Physical Ranks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time, (
SDRAM Access From Clock (
Module Configuration Type
Refresh Rate/type
SDRAM Device Width (Primary DDR SDRAM)
Error-checking DDR SDRAM Data Width
Minimum Clock Delay, Back-to-Back Random
Column Access
Burst Lengths Supported
Number of Banks on DDR SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time, (
SDRAM Access From Clock (
2.5
SDRAM Cycle Time, (
SDRAM Access From CK , (
Minimum Row Precharge Time, (
Minimum Row Active to Row Active, (
Minimum RAS# to CAS# Delay, (
Minimum RAS# Pulse Width, (
Module Rank Density
Address and Command Setup Time, (
Address and Command Hold Time, (
Data/Data Mask Input Setup Time, (
Data/Data Mask Input Hold Time, (
Min Active Auto Refresh Time (
Minimum Auto Refresh to Active/Auto Refresh
Command Period, (
SDRAM Device Max Cycle Time (
SDRAM Device Max DQS-DQ Skew Time (
DESCRIPTION
t
RFC)
t
t
t
CK) CAS Latency = 3
CK) CAS Latency = 2.5
CK) CAS Latency = 2
t
AC) CAS Latency = 2
t
t
AC) CAS Latency = 3
AC) CAS Latency =
t
RAS), (See note 3)
t
t
RC)
t
RCD)
t
CK
RP)
t
DH)
MAX
t
t
DS)
IH),
t
IS),
t
RRD)
)
t
DQSQ)
Registered, PLL/Diff. Clock
0.7ns (for PC2700 compat.)
6ns (for PC2700 compat.)
0.75ns (PC2100, PC1600)
7.5ns (PC2100, PC1600)
28
512MB, 1GB (x72, ECC, SR) PC3200
ENTRY (VERSION)
Fast / Concurrent
Auto Precharge
512MB or 1GB
SDRAM DDR
0.6ns (-40B)
0.6ns (-40B)
0.4ns (-40B)
0.4ns (-40B)
0.4ns (-40B)
7.81µs/SELF
15ns (-40B)
10ns (-40B)
15ns (-40B)
40ns (-40B)
55ns (-40B)
70ns (-40B)
12ns (-40B)
5ns (-40B)
SSTL 2.5V
0.7 (-40B)
11 or 12
3, 2.5, 2
1 clock
2, 4, 8
128
256
ECC
13
72
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
0
4
4
4
0
1
184-PIN DDR SDRAM RDIMM
MT18VDDF6472
0D
0B
1C
C0
3C
3C
80
08
07
01
48
00
04
50
70
02
82
04
04
01
0E
04
01
02
26
60
70
75
75
28
28
80
60
60
40
40
00
37
46
30
28
©2004 Micron Technology, Inc. All rights reserved.
MT18VDDF12872
0D
80
08
07
0C
01
48
00
04
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70
02
82
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04
01
0E
04
1C
01
02
26
C0
60
70
75
3C
28
3C
28
01
60
60
40
40
00
37
46
30
28
75