MT16HTF12864HY-667B3 Micron Technology Inc, MT16HTF12864HY-667B3 Datasheet - Page 2

• Manufacturer Part Number: MT16HTF12864HY-667B3
• Description: MODULE DDR2 1GB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16HTF12864HY-667B3

• Memory Type: DDR2 SDRAM
• Memory Size: 1GB
• Speed: 667MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 128Mx64
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 45ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.496A
• Number Of Elements: 16
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 2: Addressing
Table 3: Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H64M8,
Table 4: Part Numbers and Timing Parameters – 2GB Modules
Base device: MT47H128M8,
PDF: 09005aef818e4054
htf16c128_256x64h.pdf - Rev. D 3/10 EN
Parameter
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
Notes:
MT16HTF12864H(I)Y-80E__
MT16HTF12864H(I)Y-800__
MT16HTF12864H(I)Y-667__
MT16HTF12864H(I)Y-53E__
MT16HTF12864H(I)Y-40E__
MT16HTF25664H(I)Y-80E__
MT16HTF25664H(I)Y-800__
MT16HTF25664H(I)Y-667__
MT16HTF25664H(I)Y-53E__
MT16HTF25664H(I)Y-40E__
Part Number
Part Number
1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT16HTF12864HY-40ED1.
2
2
1
1
512Mb DDR2 SDRAM
1Gb DDR2 SDRAM
Module
Density
Module
Density
1GB
1GB
1GB
1GB
1GB
2GB
2GB
2GB
2GB
2GB
Configuration
Configuration
128 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
256 Meg x 64
256 Meg x 64
256 Meg x 64
256 Meg x 64
256 Meg x 64
1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
512Mb (64 Meg x 8)
16K A[13:0]
1K A[9:0]
4 BA[1:0]
2 S#[1:0]
1GB
8K
2
Bandwidth
Bandwidth
Module
Module
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Memory Clock/
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
Data Rate
1Gb (128 Meg x 8)
© 2004 Micron Technology, Inc. All rights reserved.
16K A[13:0]
8 BA[2:0]
1K A[9:0]
2 S#[1:0]
2GB
8K
(CL-
(CL-
Clock Cycles
Clock Cycles
t
t
Features
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
RCD-
RCD-
t
t
RP)
RP)