SEP8705-003 Honeywell Sensing and Control, SEP8705-003 Datasheet - Page 3
![DIODE IR EMITTING AIGAAS T-1](/photos/7/99/79937/sep8705-003_sml.jpg)
SEP8705-003
Manufacturer Part Number
SEP8705-003
Description
DIODE IR EMITTING AIGAAS T-1
Manufacturer
Honeywell Sensing and Control
Specifications of SEP8705-003
Viewing Angle
15°
Current - Dc Forward (if)
50mA
Radiant Intensity (ie) Min @ If
2.7mW/sr @ 20mA
Wavelength
880nm
Voltage - Forward (vf) Typ
1.7V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 3mm Dia (T 1)
Peak Wavelength
880nm
Forward Current If(av)
50mA
Rise Time
700ns
Fall Time Tf
700ns
Supply Voltage Range
1.7V
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
480-1965
Fig. 1
Fig. 3
Fig. 5
SEP8705
AlGaAs Infrared Emitting Diode
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.6
1.5
1.4
1.3
1.2
1.1
1.0
Radiant Intensity vs
Angular Displacement
Forward Voltage vs
Forward Current
Spectral Bandwidth
760
-40
0
-30
Angular displacement - degrees
800
10
-20
Forward current - mA
Wavelength - nm
840
-10
20
880
0
+10 +20 +30 +40
30
920
960
40
gra_027.ds4
gra_201.ds4
gra_011.ds4
1000
50
Fig. 2
Fig. 4
Fig. 6
10.0
1.60
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.20
5.0
2.0
1.0
0.5
0.2
0.1
0.7
0.4
0.2
0.1
10
Radiant Intensity vs
Forward Current
Forward Voltage vs
Temperature
Coupling Characteristics
with SDP8405
7
4
2
1
10
-40
0.01
Lens-to-lens separation - inches
0.02 0.04
-15
I
T
F
A
= 20 mA
Forward current - mA
= 25 °C
Temperature - °C
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
20
10
0.1
I
T
V
F
A
30
35
CE
= 25 mA
= 25 °C
0.2
= 5 V
40 50
60
0.4 0.7 1
gra_028.ds4
gra_208.ds4
gra_029.ds4
100
85