HEMT-3301 Avago Technologies US Inc., HEMT-3301 Datasheet

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... The HEMT-3301 and HEMT-1001are infrared emitters, using amesa structure GaAs on GaAs infrared diode, IRED, optimized for maximum quantum efficiency at a peak wavelength of 940 nm. The HEMT-3301 and HEMT- 1001emitters are untinted, undiffused plastic packages with medium wide radiation patterns. These medium-wide and wide radiation patterns eliminate the beam focusing problems that are encountered with emitters that have narrow radiation patterns ...

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... Reverse Breakdown Voltage R V Forward Voltage F Rθ Thermal Resistance J-PIN HEMT-3301 HEMT-1001 Notes: 1. Radiant intensity at ambient temperature I . Peak wavelength at ambient temperature θ is the off-axis angle from emitter centerline where the radiant intensity is half the on-axis value. 1/ 4. Approximate radiant flux output within a cone angle of θ Typ ...

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Figure 1. Radiated Spectrum. Figure 3. Forward Voltage Temperature Coefficient vs. Forward Current. Figure 5. Relative Efficiency vs. Peak Forward Current. 3 Figure 2. Forward Current vs. Forward Voltage. Figure 4. Relative Radiant Intensity vs. DC Forward Current. Figure 6. ...

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... Figure 7. Maximum Tolerable Peak Current vs. Peak Determined from Temperature Derated IDC MAX). Figure 8. Far Field Radiation Pattern, HEMT-3301. Figure 9. Far Field Radiation Pattern, HEMT-1001. 4 ...

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For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © ...