C8051T600QDB Silicon Laboratories Inc, C8051T600QDB Datasheet - Page 34

BOARD SOCKET DAUGHTER QFN

C8051T600QDB

Manufacturer Part Number
C8051T600QDB
Description
BOARD SOCKET DAUGHTER QFN
Manufacturer
Silicon Laboratories Inc
Datasheet

Specifications of C8051T600QDB

Module/board Type
Socket Module - QFN
Data Bus Width
8 bit
Operating Supply Voltage
+ 1.8 V to + 3.6 V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
For Use With/related Products
C8051T600DK
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1406
C8051T600/1/2/3/4/5/6
Table 8.4. Reset Electrical Characteristics
–40 to +85 °C unless otherwise specified.
Table 8.5. Internal Voltage Regulator Electrical Characteristics
–40 to +85 °C unless otherwise specified.
Table 8.6. EPROM Electrical Characteristics
34
Parameter
Input Voltage Range
Bias Current
Parameter
RST Output Low Voltage
RST Input High Voltage
RST Input Low Voltage
RST Input Pullup Current
V
V
Missing Clock Detector 
Timeout
Reset Time Delay
Minimum RST Low Time to
Generate a System Reset
V
V
Parameter
EPROM Size
Write Cycle Time (per Byte)
Programming Voltage (V
Programming Voltage (V
Note: 512 bytes at location 0x1E00 to 0x1FFF are not available for program storage
DD
DD
DD
DD
POR Ramp Time
Monitor Threshold (V
Monitor Turn-on Time
Monitor Supply Current
PP
PP
RST
)
)
Normal Mode
)
C8051T600/1
C8051T602/3
C8051T604/5
C8051T606
C8051T600/1/2/3/4/5
C8051T606
I
V
RST = 0.0 V
Time from last system clock
rising edge to reset initiation
Delay between release of any
reset source and code 
execution at location 0x0000
V
OL
DD
DD
= 8.5 mA, 
= 1.8 V to 3.6 V
= V
Conditions
RST
Conditions
Conditions
- 0.1 V
Rev. 1.2
8192*
4096
2048
1536
0.75 x V
6.25
5.75
Min
105
Min
400
1.7
15
Min
1.8
DD
Typ
155
6.5
6.0
1.75
Typ
625
25
50
20
Typ
30
Max
6.75
6.25
205
Max
900
0.6
0.6
1.8
50
60
30
Max
1
3.6
50
Units
bytes
bytes
bytes
bytes
µs
Units
V
V
Units
V
µA
ms
µA
µA
µs
µs
µs
µs
V
V
V
V
DD

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