TC1016/17EV Microchip Technology, TC1016/17EV Datasheet - Page 2

• Manufacturer Part Number: TC1016/17EV
• Description: BOARD DEMO FOR TC1016/TC1017
• Manufacturer: Microchip Technology

Specifications of TC1016/17EV

• Design Resources: TC1016/17EV Gerber Files
• Channels Per Ic: 1 - Single
• Voltage - Output: 1.8V, 3V
• Current - Output: 150mA, 150mA
• Voltage - Input: 2.7 ~ 6V
• Regulator Type: Positive Fixed
• Operating Temperature: -40°C ~ 125°C
• Board Type: Fully Populated
• Utilized Ic / Part: TC1016, TC1017
• Processor To Be Evaluated: TC1016 and TC1017
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant

TC1016
1.0
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .........................................................6.5V
Power Dissipation................ Internally Limited (Note 7)
Operating Temperature ................. -40°C < T
Storage Temperature......................... -65°C to +150°C
Maximum Voltage On Any Pin........V
ELECTRICAL CHARACTERISTICS
DS21666B-page 2
V
junction temperatures of – 40°C to +125°C.
Input Operating Voltage
Maximum Output Current
Output Voltage
V
Line Regulation
Load Regulation (Note 4)
Dropout Voltage (Note 5)
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Wake-Up Time
(from Shutdown mode)
Settling Time
(from Shutdown Mode)
Output Short Circuit Current
Thermal Regulation
Thermal Shutdown Die
Temperature
Thermal Shutdown Hysteresis
Output Noise
SHDN Input High Threshold
SHDN Input Low Threshold
Note
IN
OUT
= V
Temperature Coefficient
1:
2:
3:
4:
5:
6:
7:
R
ELECTRICAL
CHARACTERISTICS
+ 1V, I
Parameter
The minimum V
V
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal
Regulation specification.
Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to Ilmax at V
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable juction temperature and the
thermal resistance from junction-to-air (i.e. T
thermal shutdown. Please see Section 5.0 “Thermal Considerations” of this data sheet for more details.
TCV
R
is the regulator voltage setting. For example: V
L
OUT
= 100 µA, C
=
------------------------------------------------------------------------------------- -
V
IN
OUTMAX
has to meet two conditions: V
L
= 1.0µF, SHDN > V
V OUT
–
V
V
V
OUT
V
I
TCV
IN
OUTMIN
V
OUTMAX
I
PSRR
OUTSC
OUT
V
Sym
I
OUT
INSD
T
t
IN
V
– V
V
V
eN
I
T
OUT
WK
/ V
t
IN
SD
IN
S
IH
IL
SD
T
OUT
/P
+ 0.3V to -0.3V
/V
OUT
IN
D
R
)/V
J
R
10
IH
A
< 125°C
6
, T
, T
V
IN
J
A
R
,
R
= 25°C, unless otherwise noted. Boldface type specifications apply for
Min
– 2.5%
JA
2.7
80
60
2.7V and V
= 1.8V, 2.7V, 2.8V, 3.0V.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
). Exceeding the maximum allowable power dissipation causes the device to initiate
IN
V
R
0.01
0.23
0.05
0.04
(V
*Notice: Static-sensitive device. Unused devices must be
stored in conductive material. Protect devices from static dis-
charge and static fields. Stresses above those listed under
Absolute Maximum Ratings may cause permanent damage to
the device. These are stress ratings only and functional oper-
ation of the device at these or any other conditions above
those
specifications is not implied. Exposure to Absolute Maximum
Rating Conditions for extended periods may affect device
reliability
Typ
100
150
120
160
800
±0.5%
—
—
40
53
58
10
32
10
—
—
2
R
+ 2.5%)+V
indicated
IN
V
= 6V for t = 10 msec.
DROPOUT
R
Max
+ 2.5%
200
300
6.0
0.2
0.5
90
15
—
—
—
—
—
—
—
—
—
—
—
—
1
.
in
the
ppm/°C Note 3
nV/ Hz f = 10 kHz
Units
%V
%V
© 2005 Microchip Technology Inc.
%/V
V/W
mA
mV
mA
µA
µA
dB
µs
µs
°C
°C
%
V
V
operational
IN
IN
Note 1
Note 2
(V
I
I
I
I
SHDN = V
SHDN = 0V
f =1 kHz, I
V
C
f = 100 Hz
V
1 µF, C
100 Hz
V
Notes 6, 7
V
V
L
L
L
L
IN
IN
IN
OUT
IN
IN
R
= 0.1 mA to I
= 100 µA
= 50 mA
= 80 mA
= 5V, I
= 5V, I
= 1 µF, C
= 2.7V to 6.0V
= 2.7V to 6.0V
+ 1V) < V
Test Conditions
= 0V
OUT
sections
L
L
L
IH
= 60 mA,C
= 1 µF, f =
= 50 mA
= 60 mA,
, I
OUT
IN
L
OUTMAX
= 0
< 6V
= 1 µF,
of
IN
the
=