TLP227A(F) Toshiba, TLP227A(F) Datasheet - Page 60
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TLP227A(F)
Manufacturer Part Number
TLP227A(F)
Description
PHOTORELAY MOSFET OUT 4-DIP
Manufacturer
Toshiba
Series
TLP227Ar
Specifications of TLP227A(F)
Circuit
SPST-NO (1 Form A)
Output Type
AC, DC
On-state Resistance
2 Ohm
Load Current
500mA
Voltage - Input
1.15VDC
Voltage - Load
0 ~ 60 V
Mounting Type
Through Hole
Termination Style
PC Pin
Package / Case
4-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP227AF
9
The above operating life data are estimates extrapolated from long-term light output degradation over a single wafer lot and are shown as
reference only. Operating conditions exceeding the maximum ratings are not guaranteed.
10000000
1
1
1000000
100000
10000
140
120
100
140
120
100
GaAs LED Projected Light Output Degradation Data
GaAs LED Projected Operating Life Data
1000
Device Degradation
80
60
40
20
80
60
40
20
100
0
0
1
1
227
2.0
I
I
I
I
I
150
F
F
F
F
F
Failure criteria light output degradation Δ P O < –50%
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
10
10
100
Test conditions: I
Test conditions: I
85
3.0
60
100
100
Test time (h)
Test time (h)
25
F
F
= 50 mA, Ta = 40°C
= 10 mA, Ta = 40°C
0
1000
1000
I
F
4.0
= 10 mA
I
I
I
I
–30
F
F
F
F
= 20 mA
= 30 mA
= 40 mA
= 50 mA
Ambient Temperature (°C)
Projected F50%
operating life
Projected F0.1%
operating life
10000
10000
–50
X-3σ
X-3σ
1 / K (x10
X
X
–73
5.0
100000
100000
-3
)
60
10000000
1000000
100000
10000
140
120
100
1000
80
60
40
20
100
0
1
227
2.0
I
I
I
I
I
150
F
F
F
F
F
Failure criteria light output degradation Δ P O < –30%
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
10
100
Test conditions: I
85
3.0
60
100
Test time (h)
25
F
= 20 mA, Ta = 40°C
0
1000
4.0
I
I
I
I
I
F
F
F
F
F
–30
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
Ambient Temperature (°C)
Projected F50%
operating life
Projected F0.1%
operating life
10000
–50
X-3σ
1 / K (x10
X
–73
5.0
100000
-3
)