2sk3372 Panasonic Corporation of North America, 2sk3372 Datasheet
2sk3372
Manufacturer Part Number
2sk3372
Description
Silicon N-channel Junction
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SK3372.pdf
(4 pages)
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Silicon Junction FETs (Small Signal)
2SK3372
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2008
• High mutual conductance g
• Low noise voltage NV
Drain-source voltage (Gate open)
Gate-drain voltage (Source open)
Drain-source current (Gate open)
Gate-drain current (Source open)
Gate-source current (Drain open)
Power dissipation
Operating ambient temperature
Storage temperature
Drain current
Drain-source current
Mutual conductance
Noise voltage
Voltage gain
Voltage gain difference
2. * 1: I
* 2: ∆G
Parameter
D
Parameter
*1
is assured for I
V
. f is assured for AQL 0.065%. (The measurement method is used by source-grounded circuit.)
This product complies with the RoHS Directive (EU 2002/95/EC).
DSS
m
.
G
G
∆G
a
Symbol
Symbol
V2
V1
= 25°C ± 3°C
V
V
I
I
I
I
T
G
G
G
T
NV
GDO
DSO
GSO
P
DSS
g
I
GDO
a
DSO
V
− G
− G
opr
stg
D
V1
V2
V3
D
m
. f
= 25°C
V1
V3
* 2
−55 to +125
−20 to +80
Rating
V
V
V
V
C
V
C
V
C
V
C
V
C
100
20
20
DS
O
DS
D
D
O
D
O
D
O
D
O
D
2
2
2
= 5 pF, e
= 5 pF, A-Curve
= 5 pF, e
= 5 pF, e
= 5 pF, e
SJF00032DED
= 2.0 V, V
= 2.0 V, R
= 2.0 V, R
= 12 V, R
= 1.5 V, R
= 2.0 V, R
= 2.0 V, R
= 2.0 V, R
G
G
G
G
Conditions
= 10 mV, f = 1 kHz to 70 Hz
Unit
mW
mA
mA
mA
D
°C
°C
D
V
V
D
D
= 10 mV, f = 1 kHz
= 10 mV, f = 1 kHz
D
= 10 mV, f = 1 kHz
D
GS
= 2.2 kΩ ± 1%, V
D
= 2.2 kΩ ± 1%
= 2.2 kΩ ± 1%
= 2.2 kΩ ± 1%
= 2.2 kΩ ± 1%
= 2.2 kΩ ± 1%
= 2.2 kΩ ± 1%
= 0, f = 1 kHz
■ Package
■ Marking Symbol: 1H
• Code
• Pin Name
SSSMini3-F1
1: Drain
2: Source
3: Gate
GS
= 0
−7.5
−4.0
−8.0
Min
100
107
660
0
0
1 600
−4.7
−1.5
−5.0
Typ
0
Max
470
460
1.7
4.0
1.7
4
Unit
µA
µA
µV
µS
dB
dB
1
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2sk3372 Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Silicon Junction FETs (Small Signal) 2SK3372 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone ■ Features • High mutual conductance g m • Low noise voltage NV ■ Absolute Maximum Ratings T ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). 2SK3372 120 100 120 ( °C ) Ambient temperature T a Y 2 25° 1.6 1.2 0.8 0.4 0 – 0.8 – 0 Gate-source voltage 2.0 = 25° ...
Page 3
... This product complies with the RoHS Directive (EU 2002/95/EC). SSSMini3-F1 +0.05 0.33 −0. +0.05 0.23 −0.02 (0.40) (0.40) 0.80 ±0.05 1.20 ±0.05 2 SJF00032DED 2SK3372 Unit: mm +0.05 0.10 −0.02 3 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...