IRF3710 International Rectifier Corp., IRF3710 Datasheet

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IRF3710

Manufacturer Part Number
IRF3710
Description
Manufacturer
International Rectifier Corp.
Datasheet

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l
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Absolute Maximum Ratings
Thermal Resistance
Advanced HEXFET
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
www.irf.com
Description
I
I
I
P
V
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AR
θJC
θCS
θJA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International Rectifier utilize
Parameter
Parameter


ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
10 lbf•in (1.1N•m)
HEXFET
-55 to + 175
S
D
Max.
230
200
± 20
1.3
5.8
57
40
28
20
®
IRF3710
R
Power MOSFET
V
DS(on)
Max.
0.75
–––
62
DSS
TO-220AB
I
D
= 57A
PD - 91309B
= 100V
= 23mΩ
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1

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IRF3710 Summary of contents

Page 1

... Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G @ 10V GS @ 10V GS    ƒ 300 (1.6mm from case ) Typ. 0. 91309B IRF3710 ® HEXFET Power MOSFET 100V DSS R = 23mΩ DS(on 57A D S TO-220AB Max. Units 230 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 16V 10V 7.0V 6.0V 5.0V 100 4.5V 4.0V BOTTOM 3. 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100. ...

Page 4

0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 10 ...

Page 5

T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 550 15V 440 DRIVER + 330 ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

Y6HQG ) UCDTÃDTÃ6 IÃDSA  Ã GP UÃ8P9 Ã &'( 6TT H7G 9ÃP IÃXXÃ (Ã ((& DI ÃUC Ã6TT H7G`ÃGDI ÃÅ8Å Note: "P" in assembly line position indicates "Lead-Free" This product has been designed and qualified for the Automotive [Q101] ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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