IRF7103 International Rectifier, IRF7103 Datasheet

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IRF7103

Manufacturer Part Number
IRF7103
Description
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet

Specifications of IRF7103

Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.13Ohm
Drain-source On-volt
50V
Gate-source Voltage (max)
±20V
Continuous Drain Current
3A
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Lead Free Status / Rohs Status
Not Compliant

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Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications.
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Description
Absolute Maximum Ratings
Thermal Resistance Ratings
I
I
I
P
V
dv/dt
T
D
D
DM
J,
R
D
GS
@ T
@ T
T
@T
Adavanced Process Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
JA
STG
A
A
C
= 25°C
= 70°C
= 25°C
With these improvements, multiple
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G 2
G 1
S 2
S 1
1
2
3
4
Top View
Min.
–––
HEXFET
8
6
5
7
-55 to + 150
Max.
0.016
D1
D 1
D 2
D2
± 20
3.0
2.3
2.0
4.5
10
Typ.
S O -8
–––
®
R
IRF7103
Power MOSFET
DS(on)
V
I
DSS
PD - 9.1095B
D
Max.
62.5
= 3.0A
= 0.130
= 50V
°C/W
Units
Units
W/°C
V/nS
°C
W
A
V
8/25/97

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IRF7103 Summary of contents

Page 1

... Junction and Storage Temperature Range J, STG Thermal Resistance Ratings Parameter R Maximum Junction-to-Ambient JA HEXFET Top View @ 10V GS @ 10V GS - 150 Min. ––– 9.1095B IRF7103 ® Power MOSFET 50V DSS 0.130 D2 DS(on 3. Max. Units 3.0 A 2.3 10 2.0 W 0.016 W/°C ± 4.5 V/nS ° ...

Page 2

... IRF7103 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... IRF7103 ...

Page 4

... IRF7103 ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 10a. Switching Time Test Circuit V DS 90% 10 Fig 10b. Switching Time Waveforms 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7103 D.U. 10V Pulse Width µs Duty Factor d(on) ...

Page 6

... IRF7103 Q 10V Charge Fig 12a. Basic Gate Charge Waveform G GD Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig 12b. Gate Charge Test Circuit + ...

Page 7

... Fig 13. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period Current di/dt Diode Recovery dv/dt Forward Drop 5% IRF7103 + =10V ...

Page 8

... IRF7103 Package Outline SO8 Outline 0.25 (.010 0.25 (.010 Part Marking Information SO8 101 ° 101 INCHES DIM MIN MAX A .0532 .0688 A1 .0040 .0098 B .014 .018 C .0075 .0098 D .189 .196 E .150 .157 e .050 BASIC e1 .025 BASIC H .2284 .2440 K .011 .019 C L 0.16 ...

Page 9

... IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com (12 . GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7103 . . 8/97 ...

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