IRF734 Vishay, IRF734 Datasheet
IRF734
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IRF734 Summary of contents
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... N-Channel MOSFET TO-220 IRF734PbF SiHF734- °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 4.9 A (see fig. 12 ≤ 150 °C. J IRF734, SiHF734 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 450 DS V ± 4 3 0.59 E 330 AS I 4.9 ...
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... IRF734, SiHF734 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... V Drain-to-Source Voltage ( 91049_02 Fig Typical Output Characteristics, T Document Number: 91049 S-82998-Rev. A, 12-Jan-08 4 ° 91049_03 = 25 ° 150 ° 91049_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRF734, SiHF734 Vishay Siliconix 1 10 ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRF734, SiHF734 Vishay Siliconix 1400 MHz iss gs 1200 rss oss ds 1000 C iss 800 600 C oss 400 C rss 200 Drain-to-Source Voltage ( 91049_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 4 360 225 Total Gate Charge (nC) 91049_06 G Fig Typical Gate Charge vs. Drain-to-Source Voltage www.vishay.com Shorted gd ds ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91049 S-82998-Rev. A, 12-Jan-08 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( Fig. 12b - Unclamped Inductive Waveforms IRF734, SiHF734 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit V DS ...
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... IRF734, SiHF734 Vishay Siliconix 91049_12c Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 800 Top Bottom 600 400 200 100 Starting T , Junction Temperature (°C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D 2.2 A 3.1 A 4.9 A 125 150 Current regulator Same type as D.U.T. ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF734, SiHF734 Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...