IRFR9214 Vishay, IRFR9214 Datasheet
IRFR9214
Specifications of IRFR9214
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IRFR9214 Summary of contents
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... Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91282 S-82992-Rev. B, 12-Jan-09 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Power MOSFET FEATURES • P-Channel - 250 • Surface Mount (IRFR9214, SiHFR9214) 3.0 • Straight Lead (IRFU9214, SiHFU9214) 14 • Advanced Process Technology 3.1 • Fast Switching 6.8 • ...
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... IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... BOTTOM -4.5V 1 20μs PULSE WIDTH T = 150 C J 0.1 0 Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics, T Document Number: 91282 S-82992-Rev. B, 12-Jan-09 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 -4.5V ° 10 100 = 25 °C C -4.5V ° 10 100 = 150 °C C Vishay Siliconix ° J ° ...
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... IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix 400 1MHz iss rss oss ds gd 300 200 100 Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage -1 =-200V DS V =-125V =-50V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...
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... D = 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.1 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91282 S-82992-Rev. B, 12-Jan-09 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 125 150 ° 0.001 0. Rectangular Pulse Duration (sec) 1 Vishay Siliconix D.U.T. ...
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... IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Driver 15 V 200 TOP 160 BOTTOM 120 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91282. Document Number: 91282 S-82992-Rev. B, 12-Jan-09 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...