IRFR9214 Vishay, IRFR9214 Datasheet

MOSFET P-CH 250V 2.7A DPAK

IRFR9214

Manufacturer Part Number
IRFR9214
Description
MOSFET P-CH 250V 2.7A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR9214

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.7A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
220pf @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
3 Ohms
Drain-source Breakdown Voltage
- 250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.7 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR9214

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR9214PBF
Manufacturer:
Vishay Semiconductors
Quantity:
1 961
Company:
Part Number:
IRFR9214PBF
Quantity:
70 000
Part Number:
IRFR9214TRPBF
Manufacturer:
VISHAY
Quantity:
8 000
Company:
Part Number:
IRFR9214TRPBF
Quantity:
4 000
Company:
Part Number:
IRFR9214TRPBF
Quantity:
51 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91282
S-82992-Rev. B, 12-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
(TO-252)
D
(Max.) (nC)
(nC)
(nC)
DPAK
(V)
≤ - 2.7 A, dI/dt ≤ 600 A/µs, V
(Ω)
G
J
= 25 °C, L = 27 mH, R
S
D
(TO-251)
IPAK
a
G
c
DPAK (TO-252)
IRFR9214PbF
SiHFR9214-E3
IRFR9214
SiHFR9214
a
a
D S
V
b
GS
DD
G
= - 10 V
≤ V
= 25 Ω, I
G
DS
, T
P-Channel MOSFET
Single
- 250
IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
J
3.1
6.8
14
AS
≤ 150 °C.
= - 2.7 A (see fig. 12).
S
D
C
Power MOSFET
V
= 25 °C, unless otherwise noted
GS
3.0
DPAK (TO-252)
IRFR9214TRLPbF
SiHFR9214TL-E3
IRFR9214TRL
SiHFR9214TL
at - 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
a
a
= 100 °C
= 25 °C
FEATURES
• P-Channel
• Surface Mount (IRFR9214, SiHFR9214)
• Straight Lead (IRFU9214, SiHFU9214)
• Advanced Process Technology
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
a
a
SYMBOL
DPAK (TO-252)
IRFR9214TRPbF
SiHFR9214T-E3
IRFR9214TR
SiHFR9214T
T
dV/dt
processing
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
a
a
a
a
techniques
- 55 to + 150
LIMIT
- 250
260
± 20
- 2.7
- 1.7
0.40
- 2.7
- 5.0
- 11
100
5.0
50
Vishay Siliconix
d
IPAK (TO-251)
IRFU9214PbF
SiHFU9214-E3
IRFU9214
SiHFU9214
to
www.vishay.com
achieve
UNIT
W/°C
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
low
1

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IRFR9214 Summary of contents

Page 1

... Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91282 S-82992-Rev. B, 12-Jan-09 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Power MOSFET FEATURES • P-Channel - 250 • Surface Mount (IRFR9214, SiHFR9214) 3.0 • Straight Lead (IRFU9214, SiHFU9214) 14 • Advanced Process Technology 3.1 • Fast Switching 6.8 • ...

Page 2

... IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... BOTTOM -4.5V 1 20μs PULSE WIDTH T = 150 C J 0.1 0 Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics, T Document Number: 91282 S-82992-Rev. B, 12-Jan-09 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 -4.5V ° 10 100 = 25 °C C -4.5V ° 10 100 = 150 °C C Vishay Siliconix ° J ° ...

Page 4

... IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix 400 1MHz iss rss oss ds gd 300 200 100 Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage -1 =-200V DS V =-125V =-50V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...

Page 5

... D = 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.1 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91282 S-82992-Rev. B, 12-Jan-09 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 125 150 ° 0.001 0. Rectangular Pulse Duration (sec) 1 Vishay Siliconix D.U.T. ...

Page 6

... IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Driver 15 V 200 TOP 160 BOTTOM 120 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91282. Document Number: 91282 S-82992-Rev. B, 12-Jan-09 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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