IRL1404S International Rectifier, IRL1404S Datasheet

MOSFET N-CH 40V 160A D2PAK

IRL1404S

Manufacturer Part Number
IRL1404S
Description
MOSFET N-CH 40V 160A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL1404S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 95A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 5V
Input Capacitance (ciss) @ Vds
6600pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL1404S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL1404S
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRL1404SPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRL1404STRLPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IRL1404STRLPBF
Quantity:
800
l
l
l
l
l
l
Description
Seventh Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area.
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRL1404L) is available for low-
profile applications.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
P
V
E
I
E
dv/dt
T
T
R
R
R
www.irf.com
D
D
DM
AR
2
J
STG
D
D
GS
AS
AR
Pak is suitable for high current applications because of
@ T
@ T
JC
CS
JA
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
@T
2
Pak is a surface mount power package capable of
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
This benefit, combined with the fast
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
power MOSFETs from
Parameter
Parameter
(PCB Mounted)
GS
GS
@ 10V
@ 10V
G
Typ.
0.50
300 (1.6mm from case)
–––
–––
HEXFET
-55 to + 175
D
S
160†
110†
Max.
IRL1404S
640
200
± 20
520
3.8
1.3
5.0
95
20
D
2
Pak
®
R
Power MOSFET
DS(on)
Max.
I
V
0.75
IRL1404S
–––
IRL1404L
D
40
DSS
= 160A†
PD - 93854A
= 0.004
= 40V
IRL1404L
TO-262
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
W
A
V
A
1
02/22/02

Related parts for IRL1404S

IRL1404S Summary of contents

Page 1

... Mounted) ––– 93854A IRL1404S IRL1404L ® HEXFET Power MOSFET 40V DSS R = 0.004 DS(on 160A† Pak TO-262 IRL1404S IRL1404L Max. Units 160† 110† A 640 3.8 W 200 W 1.3 W/°C ± 520 5.0 V/ns - 175 °C Max ...

Page 2

... IRL1404S/IRL1404L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... DS Fig 1. Typical Output Characteristics 1000  ° 175 20µs PULSE WIDTH 100 4.0 5.0 6 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com IRL1404S/IRL1404L  1000 TOP BOTTOM 100 ° 10 0.1 10 100 Fig 2. Typical Output Characteristics 2 2.0 ° 1.5 1.0 0.5 = 15V 0.0 7.0 8 ...

Page 4

... IRL1404S/IRL1404L  10000 1MHz iss rss 8000 oss iss 6000 4000  C oss 2000  C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100  ° 175 ° 0.0 0.5 1.0 1.5 2.0 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRL1404S/IRL1404L R G Pulse Width Duty Factor V DS 90% 150 175 ° 10 d(on)  Notes: 1. Duty factor ...

Page 6

... IRL1404S/IRL1404L Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 1200 1000 800 + 600 400 200 0 25 Starting T , Junction Temperature( C) Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit  I D TOP ...

Page 7

... Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V Fig 14. For N-channel www.irf.com IRL1404S/IRL1404L Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance Ground Plane ƒ Low Leakage Inductance Current Transformer - - dv/dt controlled controlled by Duty Factor " ...

Page 8

... IRL1404S/IRL1404L 2 D Pak Package Outline Dimensions are shown in millimeters (inches) 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 .93 (. .69 (. .08 (. .25 (. FTER IP & 4.5M , 198 TRO L LIN SIO ATSINK & Pak Part Marking Information THIS IS AN IRF530S WITH ...

Page 9

... TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" www.irf.com IRL1404S/IRL1404L INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 ...

Page 10

... IRL1404S/IRL1404L 2 D Pak Tape & Reel Information Dimensions are shown in millimeters (inches EED D IRE CTION TRL IRE CT ION 418 LLIN ILLIM Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig ‚ Starting T = 25° 0.35mH 95A. (See Figure 12) ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords