IXFH40N50Q IXYS, IXFH40N50Q Datasheet
IXFH40N50Q
Manufacturer Part Number
IXFH40N50Q
Description
MOSFET N-CH 500V 40A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFT40N50Q.pdf
(2 pages)
Specifications of IXFH40N50Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
3800pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohms
Forward Transconductance Gfs (max / Min)
35 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
40 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
40
Rds(on), Max, Tj=25°c, (?)
0.14
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
130
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1794352
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH40N50Q2
Manufacturer:
IXYS
Quantity:
15 500
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
© 2003 IXYS All rights reserved
DM
D25
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Test Conditions
V
V
V
V
V
V
Pulse test, t
S
C
C
C
C
J
C
GS
GS
GS
GS
J
J
DS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 30 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
, di/dt 100 A/ s, V
GS
DSS
, I
D
D
DC
D
= 250 A
= 4 mA
, V
= 0.5 I
300 s, duty cycle d
G
= 2
DS
g
= 0
, High dv/dt
D25
GS
= 1 M
DD
(T
T
T
J
J
J
Advanced Technical Information
V
= 25 C, unless otherwise specified)
DSS
= 25 C
= 125 C
,
JM
2 %
IXFH 40N50Q
IXFT 40N50Q
500
min.
2.5
-55 to +150
-55 to +150
Characteristic Values
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
160
500
500
500
300
150
2.5
40
40
30
40
50
20
6
4
0.14
100
max.
4.5
25
1
V/ns
mJ
mJ
mA
W
nA
C
C
C
C
V
V
V
V
A
A
A
g
g
V
V
A
S = Source TAB = Drain
Features
Advantages
V
I
R
t
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G = Gate
D25
rr
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
DSS
DS(on)
250 ns
DS (on)
D
= 500 V
= 40 A
= 0.14
G
= Drain
S
g
DS99002(01/03)
process
(TAB)
(TAB)
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IXFH40N50Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2003 IXYS All rights reserved Advanced Technical Information IXFH 40N50Q IXFT 40N50Q Maximum Ratings 500 = 1 M 500 160 2 DSS 500 -55 to +150 150 -55 to +150 300 1.13/10 Nm/lb.in Characteristic Values ...
Page 2
... Pulse test, t 300 s, duty cycle 25A, -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 22 35 3800 ...