MRF6S9125 FREESCALE [Freescale Semiconductor, Inc], MRF6S9125 Datasheet

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MRF6S9125

Manufacturer Part Number
MRF6S9125
Description
RF Power Field Effect Transistors
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet

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Part Number:
MRF6S9125NBR1
Manufacturer:
INTERPOIN
Quantity:
12
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
N - CDMA Application
• Typical Single - Carrier N - CDMA Performance: V
GSM EDGE Application
• Typical GSM EDGE Performance: V
GSM Application
• Typical GSM Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Designed for broadband commercial and industrial applications with
950 mA, P
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
P
921 - 960 MHz)
125 Watts, Full Frequency Band (921 - 960 MHz)
@ f = 880 MHz
Derate above 25°C
out
Power Gain — 19 dB
Drain Efficiency — 62%
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 47.1 dBc @ 30 kHz Bandwidth
Power Gain — 20 dB
Drain Efficiency — 40% (Typ)
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
= 60 Watts Avg., Full Frequency Band (865 - 895 MHz or
out
= 27 Watt Avg., Full Frequency Band (865 - 895 MHz), IS - 95
C
= 25°C
DD
= 28 Volts, I
Rating
DD
DD
Operation
= 28 Volts, I
DQ
= 700 mA, P
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
DD
DQ
= 28 Volts, I
= 700 mA,
out
=
DQ
=
Symbol
V
V
T
P
DSS
T
GS
stg
D
J
CASE 1486 - 03, STYLE 1
MRF6S9125NBR1(MBR1)
CASE 1484 - 02, STYLE 1
MRF6S9125NR1(MR1)
Document Number: MRF6S9125
MRF6S9125MBR1
MRF6S9125NBR1
MRF6S9125MR1
MRF6S9125NR1
880 MHz, 27 W AVG., 28 V
TO - 270 WB - 4
LATERAL N - CHANNEL
TO - 272 WB - 4
RF POWER MOSFETs
PLASTIC
PLASTIC
SINGLE N - CDMA
- 65 to +150
- 0.5, +68
- 0.5, +12
Value
398
200
2.3
Rev. 1, 7/2005
W/°C
Unit
Vdc
Vdc
°C
°C
W
1

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MRF6S9125 Summary of contents

Page 1

... Volts Volts 700 mA 700 mA out Operation DD MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Document Number: MRF6S9125 Rev. 1, 7/2005 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 880 MHz AVG SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 PLASTIC ...

Page 2

... MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part is internally input matched. MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 2 Rating 3 = 25°C unless otherwise noted) ...

Page 3

... MHz) RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol G ps η D EVM SR1 SR2 = 28 Vdc η D IRL P1dB MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Min Typ Max Unit = 28 Vdc 950 mA — 20 — dB — 40 — % — 1.5 — % rms — ...

Page 4

... Z7 0.236″ x 0.620″ Microstrip Z8 0.050″ x 0.620″ Microstrip Z9 0.238″ x 0.620″ Microstrip Figure 1. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Schematic Table 6. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values Part Chip Capacitor C2 6.2 pF Chip Capacitor C3, C15 0.8 - 8.0 pF Variable Capacitors, Gigatrim ...

Page 5

... C10 C1 Figure 2. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor C8 C7 C20 C21 C6 C19 R2 C18 R1 C4 C11 C14 L2 L1 C13 C2 C12 C5 C3 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 C22 V DD C23 C17 C16 C15 900 MHz TO272 WB Rev ...

Page 6

... Vdc 880 MHz 880.1 MHz DD Two −Tone Measurements, 100 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 6 TYPICAL CHARACTERISTICS Vdc (Avg.) DD out I = 950 mA, N−CDMA IS−95 Pilot ...

Page 7

... G ps 25_C 25_C −30_C 85_C OUTPUT POWER (WATTS) AVG. out Gain and Drain Efficiency versus Output Power MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 = 28 Vdc 125 W (PEP) out = 950 mA, Two −Tone Measurements 1 10 TWO −TONE SPACING (MHz) versus Tone Spacing Ideal Actual − ...

Page 8

... P , OUTPUT POWER (WATTS) CW out Figure 11. Power Gain and Drain Efficiency versus CW Output Power Figure 13. MTTF Factor versus Junction Temperature MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 8 TYPICAL CHARACTERISTICS 21 70 −30_C Vdc ...

Page 9

... N - CDMA TEST SIGNAL −10 −20 −30 −40 −50 −60 −70 −80 − −100 −110 −3.6 −2.9 Figure 15. Single - Carrier N - CDMA Spectrum MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 1.2288 MHz Channel BW −ACPR @ 30 kHz +ACPR @ 30 kHz Integrated BW Integrated BW −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 f, FREQUENCY (MHz) 3.6 9 ...

Page 10

... MHz Z Z Figure 16. Series Equivalent Source and Load Impedance MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 900 MHz Z load f = 860 MHz = 5 Ω source f = 860 MHz Vdc 950 mA Avg out source load MHz Ω Ω 860 0.62 - j2.13 1.48 - j0.14 865 ...

Page 11

... RF Device Data Freescale Semiconductor NOTES MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 11 ...

Page 12

... MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 12 NOTES RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor NOTES MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 13 ...

Page 14

... MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 14 PACKAGE DIMENSIONS ...

Page 15

... GATE 5. SOURCE CASE 1484 - 02 ISSUE 272 PLASTIC MRF6S9125NBR1(MBR1) MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 E2 É É É É É É É É É É É É É É É É É É 3 É É É É É É É É É É É É ...

Page 16

... P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Document Number: MRF6S9125 Rev. 1, 7/2005 16 RoHS-compliant and/or Pb- free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free counterparts ...

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