mrf6s9160h Freescale Semiconductor, Inc, mrf6s9160h Datasheet

no-image

mrf6s9160h

Manufacturer Part Number
mrf6s9160h
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
mrf6s9160hR3
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
mrf6s9160hSR3
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
mrf6s9160hSR5
Manufacturer:
FREESCALE
Quantity:
1 400
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: V
GSM EDGE Application
• Typical GSM EDGE Performance: V
GSM Application
• Typical GSM Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 160 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Designed for N - CDMA, GSM and GSM EDGE base station applications
I
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
P
160 Watts, Full Frequency Band (921 - 960 MHz)
Output Power
DQ
Derate above 25°C
out
Power Gain — 20.9 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
Power Gain — 20 dB
Drain Efficiency — 45%
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 75 dBc
EVM — 2% rms
Power Gain — 20 dB
Drain Efficiency — 58%
= 1200 mA, P
= 76 Watts Avg., Full Frequency Band (865 - 895 MHz)
out
= 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
C
= 25°C
DD
= 28 Volts, I
Rating
DD
DD
Operation
= 28 Volts, I
μ
″ Nominal.
DQ
= 1200 mA, P
DQ
= 1200 mA,
DD
out
= 28 Volts,
=
Symbol
V
V
T
P
T
DSS
T
GS
stg
D
C
J
CASE 465A - 06, STYLE 1
Document Number: MRF6S9160H
CASE 465 - 06, STYLE 1
MRF6S9160HSR3
MRF6S9160HR3 MRF6S9160HSR3
MRF6S9160HR3
MRF6S9160HSR3
MRF6S9160HR3
880 MHz, 35 W AVG., 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
NI - 780S
SINGLE N - CDMA
- 65 to +150
- 0.5, +68
- 0.5, +12
Value
565
150
200
3.2
Rev. 1, 5/2006
W/°C
Unit
Vdc
Vdc
°C
°C
°C
W
1

Related parts for mrf6s9160h

mrf6s9160h Summary of contents

Page 1

... Volts 1200 mA 1200 mA out Operation DD ″ Nominal. μ Document Number: MRF6S9160H Rev. 1, 5/2006 MRF6S9160HR3 MRF6S9160HSR3 880 MHz AVG SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF6S9160HR3 CASE 465A - 06, STYLE 780S MRF6S9160HSR3 ...

Page 2

... Input Return Loss 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part is internally matched on input. MRF6S9160HR3 MRF6S9160HSR3 2 = 25°C unless otherwise noted) C Symbol I ...

Page 3

... Vdc η D IRL P1dB Min Typ Max Unit = 28 Vdc 1200 mA — 20 — dB — 45 — % — 2 — % rms — — dBc — — dBc = 1200 mA 160 W, DQ out — 20 — dB — 58 — % — — dB — 160 — W MRF6S9160HR3 MRF6S9160HSR3 3 ...

Page 4

... Z8 0.233″ x 0.630″ Microstrip Z9 0.128″ x 0.630″ Microstrip Z10 0.134″ x 0.630″ Microstrip Figure 1. MRF6S9160HR3(SR3) Test Circuit Schematic Table 5. MRF6S9160HR3(SR3) Test Circuit Component Designations and Values Part B1, B2 Ferrite Beads, Small C1, C2, C19 47 pF Chip Capacitors C3, C11 0.8- 8.0 pF Variable Capacitors, Gigatrim C4 2 ...

Page 5

... C16 B1 C18 C17 C19 C1 C3 Figure 2. MRF6S9160HR3(SR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor 900 MHz Rev C12 C11 C8 C10 C6 C24 B2 C22 C23 C21 C20 C14 C2 C13 C15 MRF6S9160HR3 MRF6S9160HSR3 5 ...

Page 6

... Vdc 880 MHz 880.1 MHz 16 DD Two−Tone Measurements, 100 kHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF6S9160HR3 MRF6S9160HSR3 6 TYPICAL CHARACTERISTICS η Vdc (Avg.) DD out I = 1200 mA, N−CDMA IS−95 (Pilot, Sync, ...

Page 7

... Drain Efficiency versus Output Power = 28 Vdc (Avg.) DD out = 1200 mA, Two−Tone Measurements 1 10 TWO−TONE SPACING (MHz) versus Tone Spacing Ideal Actual 38 40 −20 25_C −30 85_C −30_C −40 25_C −50 −30_C −60 −70 25_C −80 100 300 MRF6S9160HR3 MRF6S9160HSR3 100 7 ...

Page 8

... Figure 13. MTTF Factor versus Junction Temperature MRF6S9160HR3 MRF6S9160HSR3 8 TYPICAL CHARACTERISTICS 85_C −30_C C 25_C 85_C η Vdc 1200 880 MHz OUTPUT POWER (WATTS) CW out Figure 11. Power Gain and Drain Efficiency ...

Page 9

... FREQUENCY (MHz) MRF6S9160HR3 MRF6S9160HSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . ...

Page 10

... Figure 16. Series Equivalent Source and Load Impedance MRF6S9160HR3 MRF6S9160HSR3 910 MHz Z load f = 850 MHz = 2 Ω 910 MHz Z source f = 850 MHz Vdc 1200 mA Avg out source load MHz Ω Ω 850 0.61 - j1.27 1.20 + j0.03 865 0.66 - j1.15 1.26 + j0.15 880 0.64 - j1.05 1.31 + j0.22 895 0.55 - j0.90 1.32 + j0.28 910 ...

Page 11

... S 0.365 0.375 9.27 9.52 U −−− 0.040 −−− 1. −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S9160HR3 MRF6S9160HSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 11 ...

Page 12

... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S9160HR3 MRF6S9160HSR3 Document Number: MRF6S9160H Rev. 1, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

Related keywords