MT48H16M16LF MICRON [Micron Technology], MT48H16M16LF Datasheet

MT48H16M16LF

Manufacturer Part Number

MT48H16M16LF

Description

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

Manufacturer

MICRON [Micron Technology]

Datasheet

1.MT48H16M16LF.pdf (71 pages)

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Company

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Part Number:

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Manufacturer:

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Company:

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Part Number:

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Micron Technology Inc

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Company:

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Part Number:

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Manufacturer:

MICRON/美光

Quantity:

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Part Number:

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Manufacturer:

MICRON/美光

Quantity:

20 000

Company:

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Part Number:

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Manufacturer:

Micron Technology Inc

Quantity:

10 000

Current page: 1 of 71
Download datasheet (2Mb)

Mobile SDRAM

MT48H16M16LF – 4 Meg x 16 x 4 banks

MT48H8M32LF – 2 Meg x 32 x 4 banks

Features

• Fully synchronous; all signals registered on positive

• V

• Internal, pipelined operation; column address can

• Four internal banks for concurrent operation

• Programmable burst lengths: 1, 2, 4, 8, or continuous

• Auto precharge, includes concurrent auto precharge

• Auto refresh and self refresh modes

• LVTTL-compatible inputs and outputs

• On-chip temperature sensor to control refresh rate

• Partial-array self refresh (PASR)

• Deep power-down (DPD)

• Selectable output drive (DS)

• 64ms refresh period (8,192 rows)

Notes: 1. For continuous page burst, contact factory

PDF:09005aef8219eeeb/Source: 09005aef8219eedd

MT48H16M16LF__1.fm - Rev F 4/07 EN

Options

• V

• Configuration

• Plastic “green” package

• Timing – cycle time

• Power

• Operating temperature range

• Design revision

edge of system clock

be changed every clock cycle

page

– 1.8V/1.8V

– 16 Meg x 16 (4 Meg x 16 x 4 banks)

– 8 Meg x 32 (2 Meg x 32 x 4 banks)

– 54-ball VFBGA (8mm x 9mm)

– 90-ball VFBGA (8mm x 13mm)

– 7.5ns at CL = 3

– 8ns at CL = 3

– Standard I

– Low I

– Commercial (0° to +70°C)

– Industrial (–40°C to +85°C)

for availability.

Q = 1.70–1.95V

2P/I

Products and specifications discussed herein are subject to change by Micron without notice.

2P/I

Marking

16M16

8M32

None

-75

-8

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

Table 1:

Table 2:

Configuration

Refresh count

Row addressing

Bank addressing

Column addressing

Speed

Grade

-75

-8

Micron Technology, Inc., reserves the right to change products or specifications without notice.

CL = 2 CL = 3 CL = 2 CL = 3

104

100

Clock Rate

(MHz)

Key Timing Parameters

CL = CAS (READ) latency

Addressing

133

125

4 Meg x 16 x 4

16 Meg x 16

8K (A0–A12)

4 (BA0, BA1)

512 (A0–A8)

Access Time

8ns

9ns

banks

6ns

7ns

2 Meg x 32 x 4

Setup

4 (BA0, BA1)

4K (A0–A11)

512 (A0–A8)

Time

8 Meg x 32

Data

1.5ns

2.5ns

Features

banks

Time

Data

Hold

1ns

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