Search results for "transistor 960 mhz"
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Showing 1-26 of 26 items
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Part Number:
BLF7G10L-250
Description:
250 w ldmos power transistor for base station applications at frequencies from 920 mhz to 960 mhz
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BLF7G10LS-250
Description:
250 w ldmos power transistor for base station applications at frequencies from 920 mhz to 960 mhz
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BLF8G10L-160
Description:
160 w ldmos power transistor for base station applications at frequencies from 920 mhz to 960 mhz
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BLF8G10LS-160
Description:
160 w ldmos power transistor for base station applications at frequencies from 920 mhz to 960 mhz
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PTB20181
Description:
6 watts, 915-960 mhz cellular radio rf power transistor
Manufacturer:
Ericsson Microelectronics
Part Number:
PTF080901E
Description:
Ldmos rf power field effect transistor 90 w/ 869-960 mhz
Manufacturer:
Infineon Technologies AG
Part Number:
PTF10139
Description:
60 watts/ 860-960 mhz goldmos field effect transistor
Manufacturer:
Ericsson
Part Number:
SD4017
Description:
Rf & microwave transistor 806-960 mhz cellular base stations
Manufacturer:
STMicroelectronics
Part Number:
PTF080451
Description:
Ldmos rf power field effect transistor 45 w/ 869-960 mhz
Manufacturer:
Infineon Technologies AG
Part Number:
PTF080601A
Description:
Ldmos rf power field effect transistor 60 w/ 860-960 mhz
Manufacturer:
Infineon Technologies AG
Part Number:
PTF080601F
Description:
Ldmos rf power field effect transistor 60 w/ 860-960 mhz
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
PTF080901F
Description:
Ldmos rf power field effect transistor 90 w/ 869-960 mhz
Manufacturer:
Infineon Technologies AG
Part Number:
PTF10015
Description:
50 watts/ 300-960 mhz goldmos field effect transistor
Manufacturer:
Ericsson
Part Number:
PTF10020
Description:
125 watts/ 860-960 mhz goldmos field effect transistor
Manufacturer:
Ericsson
Datasheet:
Part Number:
PTF10133
Description:
85 watts/ 860-960 mhz goldmos field effect transistor
Manufacturer:
Ericsson
Part Number:
PTF102027
Description:
40 watts/ 925-960 mhz goldmos field effect transistor
Manufacturer:
Ericsson
Part Number:
PTF080451E
Description:
Ldmos rf power field effect transistor 45 w, 869-960 mhz
Manufacturer:
INFINEON [Infineon Technologies AG]
Part Number:
PTF080601
Description:
Ldmos rf power field effect transistor 60 w, 860-960 mhz
Manufacturer:
INFINEON [Infineon Technologies AG]
Datasheet:
Part Number:
PTF080901
Description:
Ldmos rf power field effect transistor 90 w, 869-960 mhz
Manufacturer:
INFINEON [Infineon Technologies AG]
Part Number:
BCP56-16,115
Description:
Transistor npn 80v 1a sot223
Manufacturer:
NXP Semiconductors
Datasheet:
Power - Max : 960mWPower Dissipation : 960 mWFrequency - Transition : 180MHzMaximum Operating Frequency : 180 MHz
Part Number:
BCP55-16,115
Description:
Transistor npn 60v 1a sot-223
Manufacturer:
NXP Semiconductors
Datasheet:
Power - Max : 960mWPower Dissipation : 960 mWFrequency - Transition : 180MHzMaximum Operating Frequency : 180 MHz
Part Number:
BCP55,115
Description:
Transistor npn 60v 1a sot223
Manufacturer:
NXP Semiconductors
Datasheet:
Power - Max : 960mWPower Dissipation : 960 mWFrequency - Transition : 180MHzMaximum Operating Frequency : 180 MHz
Part Number:
BCP55-10,115
Description:
Transistor npn 60v 1a sot223
Manufacturer:
NXP Semiconductors
Datasheet:
Power - Max : 960mWPower Dissipation : 960 mWFrequency - Transition : 180MHzMaximum Operating Frequency : 180 MHz
Part Number:
BCP56-10,115
Description:
Transistor npn 80v 1a sot223
Manufacturer:
NXP Semiconductors
Datasheet:
Power - Max : 960mWPower Dissipation : 960 mWFrequency - Transition : 180MHzMaximum Operating Frequency : 180 MHz
Part Number:
mrf1150ma
Description:
150 w peak, 960?1215 mhz microwave power transistor npn silicon
Manufacturer:
Tyco Electronics
Datasheet: