ZVN3310F Diodes Inc, ZVN3310F Datasheet
ZVN3310F
Manufacturer Part Number
ZVN3310F
Description
N CH MOSFET, 100V, 100mA, SOT-23
Manufacturer
Diodes Inc
Datasheet
1.ZVN3310F.pdf
(2 pages)
Specifications of ZVN3310F
Transistor Polarity
N Channel
Continuous Drain Current Id
100mA
Drain Source Voltage Vds
100V
On Resistance Rds(on)
10ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZVN3310FTA
Manufacturer:
ZETEX
Quantity:
20 000
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995
FEATURES
*
*
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
100 Volt V
R
DS(on)
= 10
DS
amb
=25°C
ZVP3310F
MF
amb
t
t
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
=25°C
GS(th)
DS(on)
iss
oss
rss
DSS
source impedance and <5ns rise time on a pulse generator
100
0.8
500
100
3 typ
5 typ
4 typ
5 typ
3 - 396
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
2.4
20
1
50
10
40
15
5
5
7
6
7
stg
V
V
nA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
=1mA, V
-55 to +150
=100V, V
=80V, V
=25V, V
=25V, I
=25V, V
= 20V, V
=10V, I
VALUE
25V, I
100
100
330
ZVN3310F
2
20
D
GS
DS
D
D
GS
GS
GS
D
=500mA
=500mA
=0V
GS
= V
=500mA
DS
=0V, T=125°C
=10V
=0V, f=1MHz
SOT23
=0
=0V
GS
UNIT
mW
mA
°C
V
A
V
G
S
(2)
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ZVN3310F Summary of contents
Page 1
... R 10 DS(on) g 100 iss C 15 oss C 5 rss t 3 typ 5 d(on typ typ 6 d(off typ 7 f source impedance and <5ns rise time on a pulse generator 3 - 396 ZVN3310F D SOT23 VALUE UNIT 100 100 2 20 330 -55 to +150 V I =1mA =1mA 20V =100V, V ...
Page 2
... Gate charge v gate-source voltage 2.4 2.2 2.0 1.8 1.6 1 1.0 0.5A 0.2A 0.8 0.6 0.4 -80 - Normalised 397 ZVN3310F Drain Source Voltage (Volts 50V 80V 20V I 0.6A D= 0.2 0.4 0.6 0.8 1.0 Q-Charge (nC) I 0.5A D=- -40 - 100 140 160 120 T-Temperature (C° ...